Methods of filling an organic or inorganic liquid in an assembly module

ABSTRACT

A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array. In another one embodiment, multiple color emissive light emitting diodes semiconductor driving module is formed to display color images. In another embodiment, multiple patterns of semiconductor units having multiple functions semiconductor driving module is formed to provide multiple functions for desire application.

This application claims benefit of U.S. provisional applications No.62/341,296 filed on May 25, 2016 under 35 U.S.C. §119(e); the entirecontents of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION Field of the Invention

This invention relates a method to fill an organic or inorganic liquidin a gap region in an assembly module.

Related Art

There are many known semiconductor substrate removal technologies. Thesetechnologies include mechanical grinding removal, planer removal,chemical wet etching removal and laser irradiation the interfacial layerfor removal. For removal of semiconductor chip array from their growthsubstrate to another backplane, a method to protect the semiconductorchip array is a key to obtain high yield chip array transfer. Morespecifically, for the micro LED display, a high yield micro LEDsubstrate removal and transferring is a key to obtain robust micro LEDarray for its application. The micro LED structure is required to beenhanced and the enhanced structure could be sustained the physicalforce removal of the LED substrate. In addition, the micro LED should berobust enough to be transferred to any other backplanes or backplanes.More specifically, for the micro display technologies such as theorganic light emitting diode display, micro LED display. Recently, smallsize displays with high resolution for wearable electronic devices aregetting more popular, for example of display using in head mounteddisplay, virtual reality, augmented reality, pico-projector. Currently,most of small size high resolution display is fabricated by organiclight emitting diode. The organic light emitting diode display ispotentially used in many wearable electronic display, head mounteddisplay (HMD), head up display (HUD), smart watch display, smart banddisplay, virtual reality (VR), augmented reality (AR), pico-projectorand smart ring display.

SUMMARY OF THE INVENTION

This invention relates a method to fill an organic or inorganic liquidinto a gap region in a semiconductor assembly module. More specifically,a semiconductor assembly module structure comprising multiplesemiconductor units together formed an array on a substrate andassembled to a backplane having circuitry. An organic or inorganicliquid material dispensed on an edge of the assembly module. Thisinvention disclosure a method to fill the organic or inorganic liquidmaterial in the semiconductor assembly module. This invention furtherdisclosure a method to form a semiconductor driving module, a method toform a VLED driving module, a method to form a full color light emittingdriving module. This invention disclosure a structure of thesemiconductor assembly module with filled organic or inorganic liquidmaterial to improve robustness. This invention further disclosure astructure of a semiconductor driving module, a structure of a full colorlight emitting driving module.

The method and structure in this invention could be, utilized to anysuitable process in different application fields such as semiconductorlight emitting unit display, semiconductor lighting panel, semiconductorthin film lighting, touch panel, light emitting diode, solid statelighting, lighting communication, micro engineering mechanical system,high power devices, high voltage devices, optical interconnection, solarcell, battery, bio array sensor, smart display panel, smart lightingcommunication, smart LED package, and other suitable semiconductordevices.

In one embodiment, a method to fill an organic or inorganic flowablematerial which could be liquid material into the gap regions of ansemiconductor assembly module comprising: forming semiconductor units 11on a substrate 12 to create an array module 15; attaching the arraymodule to a backplane 14 having circuitry to form the semiconductorassembly module 10 in which multiple gap regions are formed inside thesemiconductor assembly module and edge gap regions are formed surroundthe edge of the semiconductor assembly module; dispensing an organic orinorganic flowable material 16 on an edge of the semiconductor assemblymodule; loading the semiconductor assembly module into a compressivechamber; introducing a gas into the compressive chamber to create highpressure environment inside the compressive chamber; using the highinternal acting gas pressure P_(acting) (the P_(acting) is the forcecreated by the differential pressure of the P_(chamber) and the pressureP_(gap) when the flowable material is dispensed on the edge of thesemiconductor assembly module) to force the organic or inorganicflowable material into the semiconductor assembly module gap regions;venting the compressive chamber to pressure that is lower thanP_(chamber) to create voids or air-gaps 17 in the semiconductor assemblymodule gap regions; crosslinking the organic or inorganic flowablematerial to be the partially cured (semi-cured) organic or inorganicmaterial by applying heat or photon energy; removing the partially curedorganic or inorganic material on the edge of the substrate sidewallusing mechanical or chemical means; performing a final curing step byapplying heat and time to the semiconductor assembly module to cure thepartially cured organic or inorganic material to be stable solid.

In another one embodiment, a method to form a semiconductor drivingmodule comprising: forming a semiconductor convert module by removingthe substrate from the Semiconductor assembly module utilizing asubstrate removal process such as laser irradiation lift-off, chemicalor plasma etching or mechanical process; fabricating a circuitryconnection on the semiconductor convert module to form a semiconductordriving module.

In another one embodiment, a method to form a vertical light emittingdiode (VLED) driving module comprising multiple VLED units formed on asubstrate to create a VLED array module; attaching the VLED array moduleto a backplane to form the VLED semiconductor assembly module in whichmultiple gap regions are formed inside the VLED semiconductor assemblymodule and edge gap regions are formed surround the edge of the VLEDsemiconductor assembly module; dispensing an organic or inorganicflowable material on an edge of the VLED semiconductor assembly module;loading the VLED semiconductor assembly module into a compressivechamber; introducing a gas into the compressive chamber to create highpressure environment inside the compressive chamber; using the highinternal acting gas pressure P_(acting) to force the organic orinorganic flowable material into the VLED semiconductor assembly modulegap regions; venting the compressive chamber to atmosphere pressureenvironment creating void or an air-gap in the VLED semiconductorassembly module gap regions; crosslinking the organic or inorganicflowable material to be the partially cured (semi-cured) organic orinorganic material by applying heat or photon energy; removing thepartially cured organic or inorganic material on the edge of thesubstrate sidewall using mechanical or chemical means; performing afinal curing step by applying heat and time to the VLED semiconductorassembly module to cure the partially cured organic or inorganicmaterial to be stable solid; forming a VLED semiconductor convert moduleby removing the substrate from the VLED semiconductor assembly moduleutilizing a substrate removal process such as laser irradiation lift-offprocess; forming N-contact metal layer and isolation layer on the VLEDunits of the VLED semiconductor convert module; fabricating a commoncathode conductive layer on the cathode layer of the backplane and onthe N-contact metal layer of the VLED semiconductor convert module toconnect to form a VLED semiconductor driving module.

In another one embodiment, a method to form a color emissive lightemitting diode driving module comprising: multiple first color LED unitsformed on a substrate to create a first color LED array module; multiplesecond color LED units together formed on a substrate to create a secondcolor LED array module; multiple third color LED units together formedon a substrate to create a third color LED array module; Attaching afirst color LED array module on a backplane having circuitry to form afirst color LED semiconductor assembly module in which multiple gapregions are formed inside the first color LED semiconductor assemblymodule; dispensing the organic or inorganic flowable material andintroducing an internal acting gas pressure P_(acting) to force theorganic or inorganic flowable material into the multiple gap regions;performing curing step by applying heat and time to cure the organic orinorganic material to be stable solid; utilizing a substrate removingprocess to remove the first color LED substrate; removing the organic orinorganic material to form a first color LED semiconductor convertmodule; Attaching a second color LED array module on the first color LEDsemiconductor convert module to form a second-first color LEDsemiconductor assembly module in which multiple gap regions are formedinside the second-first color LED semiconductor assembly module;dispensing the organic or inorganic flowable material and introducing aninternal acting gas pressure P_(acting) to force the organic orinorganic flowable material into the multiple gap regions; performingcuring step by applying heat and time to cure the organic or inorganicmaterial to be stable solid; utilizing a substrate removing process toremove the second color LED substrate; removing the organic or inorganicmaterial to form a second-first color LED semiconductor convert module;Attaching a third color LED array module on the second-first color LEDsemiconductor convert module to form a third-second-first color LEDsemiconductor assembly module in which multiple gap regions are formedinside the third-second-first color LED semiconductor assembly module;dispensing the organic or inorganic flowable material and introducing aninternal acting gas pressure P_(acting) to force the organic orinorganic flowable material into the multiple gap regions; performingcuring step by applying heat and time to cure the organic or inorganicmaterial to be stable solid; utilizing a substrate removing process toremove the third color LED substrate; removing the organic or inorganicmaterial to form a third-second-first color LED semiconductor convertmodule; additional color could be added to the semiconductor convertmodule by repeating the process steps of forming color LED semiconductorassembly module and as an option to obtain additional one or more colorLED to desire level of light output; utilizing an insulation layer tothe gap regions; forming a N-contact metal layer and an isolation layeron multiple color LED units of the third-second-first color LED convertmodule; fabricating a common cathode conductive layer on a cathode ofthe backplane, and connect to the N-contact metal layer of thethird-second-first color LED semiconductor convert module to form acolor emissive light emitting diode semiconductor driving module.

In another one embodiment, the semiconductor units such as LED, VSCELhaving metal base layers with magnetic property such that one couldhandle or pick-up the whole continuous array layer from a temporarysubstrate and placing the continuous array layer on a backplane havingcircuitry then applying a bonding process via heat or photon energy toconnect the jointing layers of the continuous array layer to the secondjointing layers of a backplane to form a semiconductor convert module;the electromagnetic force could be released before or after the bondingtaking place;

In another one embodiment, a method to form an organic or inorganicmaterial inside multiple gap regions of multiple-patterns semiconductorassembly module comprising: multiple-patterns of semiconductor unitshaving multiple functions together formed on a substrate to create amultiple-patterns semiconductor array module; Attaching themultiple-patterns semiconductor array module to a backplane havingcircuitry by a jointing layer to form a multiple-patterns semiconductorassembly module in which multiple gap regions including gaps andmultiple gap channels are formed inside the multiple-patternssemiconductor assembly module; dispensing the organic or inorganicflowable material and introducing an internal acting gas pressureP_(acting) to force the organic or inorganic flowable material into themultiple gap regions through multiple gap channels; performing curingstep by applying heat and time to cure the organic or inorganic materialto be stable solid; wherein an voids or air-gaps in the stable solidorganic or inorganic material in the assembly multiple-patterns modulegap regions and multiple gap channels.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is the scheme cross section diagram of a Type-A semiconductorassembly module.

FIG. 1B is the scheme cross section diagram of a Type-B semiconductorassembly module.

FIG. 2 is a top view for an example of 3×4 semiconductor assemblymodule.

FIG. 3A is a cross sectional view of an organic or inorganic flowablematerial dispensed on the edge of the substrate in FIG. 1A structure.

FIG. 3B is a cross sectional view of an organic or inorganic flowablematerial dispensed on the edge of the substrate in FIG. 1B structure.

FIG. 3C is a top view of an organic or inorganic flowable materialdispensed on the edge of the substrate, and on a portion of thebackplane.

FIG. 4 is a scheme diagram of a compressive chamber.

FIG. 5A is the cross sectional view of the organic or inorganic flowablematerial filled into all of the gap-A regions in the Type-Asemiconductor assembly module.

FIG. 5B is the cross sectional view of the organic or inorganic flowablematerial filled into all of the gap-B regions in the Type-Bsemiconductor assembly module.

FIG. 6 is a top view of the organic or inorganic flowable materialfilling into all gap regions of the semiconductor assembly module.

FIG. 7A is the organic or inorganic material in all the gap-A regions ofthe Type-A semiconductor assembly module.

FIG. 7B is the organic or inorganic material in all the gap-B regions ofthe Type-B semiconductor assembly module.

FIG. 8 is a top view of the organic or inorganic material filled insemiconductor assembly module gap regions.

FIG. 9A is to remove a portion of the organic or inorganic material onthe edge of the substrate sidewall in the edge gap region.

FIG. 9B is to remove a portion of the organic or inorganic material onthe edge of the substrate sidewall in the edge gap region.

FIG. 10 is a top view of the organic or inorganic material fill in thesemiconductor assembly module gap regions.

FIG. 11A is the Type-A semiconductor convert module.

FIG. 11B is the Type-B semiconductor convert module.

FIG. 12 is a top view of the organic or inorganic material fill in theedge gap regions and gap regions of the semiconductor convert module.

FIG. 13 is to remove the organic or inorganic material in the edge gapregion and gap-A regions of the Type A semiconductor convert module.

FIG. 14 is a connecting layer forming on the semiconductor unit and gapregions of the semiconductor convert module.

FIG. 15 is a process scheme diagram of one embodiment method tofabricate the semiconductor driving module.

FIG. 16A is a flip-chip Type-A LED unit structure.

FIG. 16B is a vertical-chip Type-A1 LED unit structure.

FIG. 16C is a vertical-chip Type-A2 LED unit structure.

FIG. 16D is a vertical-chip Type-A3 LED unit structure.

FIG. 16E is a vertical-chip Type-A4 LED unit structure.

FIG. 16F is a flip-chip Type-B LED unit structure.

FIG. 16G is a vertical-chip Type-B1 LED unit structure.

FIG. 16H is a vertical-chip Type-B2 LED unit structure.

FIG. 16I is a vertical-chip Type-B3 LED unit structure.

FIG. 17 is a VLED array module.

FIGS. 18A-18G show a schematic diagram of side view and top view tofabricate the individual original emissive color LED unit array moduleand the backplane.

FIG. 18A is a scheme diagram of N×3 blue LED units on a sapphiresubstrate to form a blue LED array module.

FIG. 18B is a scheme diagram of N×3 green LED units on a sapphiresubstrate to form a green LED array module.

FIG. 18C is a scheme diagram of N×3 red LED units on a sapphiresubstrate to form a red LED array module.

FIG. 18D is multiple anode layers together formed on a backplane havingcircuitry to form an anode array module.

FIG. 18E is the top view of N (row)×3 (column) blue LED units togetherformed on a sapphire substrate to form a blue LED array module.

FIG. 18F is the top view of N (row)×3 (column) green LED units togetherformed on a sapphire substrate to form a blue LED array module.

FIG. 18G is the top view of N (row)×3 (column) blue LED units togetherformed on a GaAs substrate to form a red LED array module.

FIGS. 19A-19L are process follow and steps to fabricate a full color RGBLED driving module.

FIG. 19A is a red LED semiconductor assembly module.

FIG. 19B is a red LED semiconductor convert module.

FIG. 19C is a green-red LED semiconductor assembly module.

FIG. 19D is to fill an organic or inorganic material into the green-redLED semiconductor assembly module gap regions.

FIG. 19E is to pattern a stop mask in relative red LED unit regionpatterned on the top of the sapphire substrate.

FIG. 19F is a green-red LED semiconductor convert module.

FIG. 19G is to remove the organic or inorganic material in green-red LEDsemiconductor convert module.

FIG. 19H is blue-green-red LED semiconductor assembly module.

FIG. 19I is to fill an organic or inorganic material into theblue-green-red LED semiconductor assembly module gap regions.

FIG. 19J is to pattern a stop mask in the relative red LED unit andgreen LED unit region on the top of the sapphire substrate.

FIG. 19K is a blue-green-red LED semiconductor convert module.

FIG. 19L is the top view of the blue-green-red LED semiconductor convertmodule.

FIG. 20 is one embodiment layout for the color emissive blue-green-redLED semiconductor driving module.

FIG. 20A is a top view of the full color emissive blue-green-red LEDsemiconductor driving module.

FIG. 20B is a cross section structure of the color emissiveblue-green-red LED semiconductor driving module.

FIG. 21 is another one embodiment structure for the color emissiveblue-green-red LED semiconductor driving module.

FIG. 21A is a top view of the color emissive blue-green-red LEDsemiconductor driving module.

FIG. 21B is a cross section structure of the color emissiveblue-green-red LED semiconductor driving module.

FIG. 22A is a micro lens formed on top of the FIG. 19K structure.

FIG. 22B is another one embodiment for the micro lens forming on top ofthe FIG. 19K structure.

FIG. 22C is a heat sink module formed underneath of the backplane.

FIG. 23 shows a top electromagnetic head could be posited to close tothe top of FIG. 11A structure for an example.

FIG. 24 is the electromagnetic head touched to the continuous arraylayer.

FIG. 25 is the continuous array layer picked up by the electromagnetichead.

FIG. 26 is the continuous array layer placed/pressed to a backplane bythe electromagnetic head.

FIG. 27 is another one semiconductor convert module.

FIG. 28 is to remove the organic or inorganic material in the edge gapregion and gap regions of the semiconductor convert module.

FIG. 29 is a cross sectional view to show a multiple-patterns ofsemiconductor units having multiple functions semiconductor assemblymodule.

FIG. 30 is a top view of a multiple-patterns of semiconductor unitshaving multiple functions semiconductor assembly module.

FIG. 31 is a top view of another one multiple-patterns of semiconductorunits having multiple functions semiconductor assembly module.

FIG. 32 is a top view of another one multiple-patterns of semiconductorunits having multiple functions semiconductor assembly module.

FIG. 33 is a top view of another one multiple-patterns of semiconductorunits having multiple functions semiconductor assembly module.

DETAILED DESCRIPTION OF THE INVENTION

It is to be understood that when an element is stated as being “on”another element, it can be directly on the other element or interveningelements can also be present. However, the term “directly” means thereare no intervening elements. In addition, although the terms “first”,“second” and “third” are used to describe various elements, theseelements should not be limited by the term. Also, unless otherwisedefined, all terms are intended to have the same meaning as commonlyunderstood by one of ordinary skill in the art.

This invention disclosure a method to fill an organic or inorganicflowable material into a gap region in a semiconductor assembly module.More specifically, a semiconductor assembly module structure comprisingmultiple semiconductor units 11 together formed an array on a substrateand assembled to a backplane having circuitry. An organic or inorganicflowable material dispensed on an edge of the semiconductor assemblymodule (10 a or 10 b). This invention disclosure a method to fill theorganic or inorganic flowable material in the semiconductor assemblymodule (10 a or 10 b). This invention further disclosure a method toform a semiconductor driving module, a method to form a full color lightemitting driving module. This invention disclosure a structure of thesemiconductor assembly module (10 a or 10 b) with filled organic orinorganic liquid material to improve robustness. This invention furtherdisclosure a structure of a semiconductor driving module, a structure ofa full color light emitting driving module.

In one embodiment, FIG. 1A shows the scheme cross section diagram of aType-A semiconductor assembly module 10 a. The Type-A semiconductorassembly module structure comprising multiple semiconductor units 11together formed an array on a substrate 12 to form an array module 15;The array module 15 is assemble attached to a backplane having circuitryby a jointing layer 13. Multiple gap-A regions are formed inside theType-A semiconductor assembly module 10 a and edge gap regions areformed surround the edge of the Type-A semiconductor assembly module 10a; FIG. 1B shows the scheme cross section diagram of a Type-Bsemiconductor assembly module 10 b. The Type-B semiconductor assemblymodule structure comprising multiple semiconductor units 11 togetherformed an array on a substrate 12 to form an array module 15; The arraymodule 15 is assemble attached to a backplane by a jointing layer 13.Multiple gap-B regions are formed inside the Type-B semiconductorassembly module 10 b and edge gap regions are formed surround the edgeof the Type-B semiconductor assembly module 10 b; Please note that aportion of semiconductor layer is not etched and remained in gap-Bregion. The semiconductor units are connected via the remainingsemiconductor layer for Type B semiconductor assembly module 10 a andthe Semiconductor units 11 are electrically separated for Type Asemiconductor assembly module 10 a.

Multiple semiconductor units 11 (N×M) together formed on a substrate isa N×M array module; The N×M array module is attached to a backplane 14to form an N×M semiconductor assembly module; wherein, N, or M is aninteger. N is the number of semiconductor units in one column and M isthe number of semiconductor units in one row.

FIG. 2 gives a top view for an example of 3×4 semiconductor assemblymodule. In FIG. 2, the size of backplane 14 is larger than that of thesubstrate 12. The substrate 12 is on the top, and the semiconductorunits 11 are underneath of the substrate 12. The jointing layer 13 (isnot shown in FIG. 2) underneath of the semiconductor units 11 asdescribed in FIG. 1A and FIG. 1B. The gap-A region, gap-B region, edgegap region described in FIG. 1A, and FIG. 1B could be formed in therelated position as shown in FIG. 2.

Please refer to FIG. 1A and FIG. 3A, FIG. 3A is a cross sectional viewof the semiconductor assembly module (10 a or 10 b) after an organic orinorganic material (a liquid, a flowable material) 16 is dispensed onthe edge of the substrate 12 in FIG. 1A structure. Please also refer toFIG. 1B and FIG. 3B, FIG. 3B is a cross sectional view of an organic orinorganic material 16 (a liquid, a flowable material) dispensed on theedge of the substrate 12 in FIG. 1B structure. For the top view of FIG.3A and FIG. 3B, FIG. 3C is a top view of an organic or inorganicmaterial 16 (a liquid, a flowable material) dispensed on the edge of thesubstrate 12 and dispensed on a portion of the backplane 14.

A filling method could be used to fill an organic or inorganic flowablematerial 16 into gap-A regions inside the Type-A semiconductor assemblymodule 10 a or gap-B regions inside the Type-B semiconductor assemblymodule 10 b. The gap regions including semiconductor units 11 and thesidewalls of the jointing layer 13 could be filled with the organic orinorganic flowable material 16. The filling method could be made byusing different methods: an ultrasonic wave vibration method to deliverthe flowable material from edge of the semiconductor assembly moduleinto the inside gap regions, a liquid pressure method to provide theliquid pressure to press the flowable material from edge of thesemiconductor assembly module into the inside gap regions, orcompressive chamber method to generate a high internal acting gaspressure P_(acting) to force the flowable material from edge of thesemiconductor assembly module into the inside gap regions.

For the ultrasonic wave vibration method, the semiconductor assemblymodule could be immersing into the organic or inorganic flowablematerial container and put in a water of the ultrasonic generator (suchas DELTA-D150). The ultrasonic wave could provide a high vibrationfrequency wave to the water to generate the high frequency wave anddeliver the high frequency wave to vibrate the organic or inorganicflowable material inside container. The organic or inorganic flowablematerial could be vibrated and diffused into the inside gap regions ofthe semiconductor assembly module. Please note since high frequency waveenergy delivery needed a liquid type material as a medium to transmitthe high frequency wave, if one decides to use the ultrasonic wavevibration method, the selected organic or inorganic liquid flowablematerial needs to have relative low viscosity property.

For the high liquid pressure method, the semiconductor assembly moduleis put in a bath containing the organic or inorganic flowable materialhaving sufficient depth h that produces sufficient liquid pressure P toforce the organic or inorganic flowable material into the semiconductorassembly module gap regions; the equation for the liquid pressure:

P=h·d·g;

wherein, P is the pressure, h is the height (depth) of the liquid, d isthe liquid density and g is acceleration of gravity.

In one embodiment, a compressive chamber 400 filling method could beused to fill the organic or inorganic material (a liquid, a flowablematerial) from the edge of the semiconductor assembly module into theinside gap regions. dispensing an organic or inorganic flowable material16 on an edge of the semiconductor assembly module; The dispensing ofthe flowable material could be performed in air, or other gasesenvironment, in atmosphere or reduced pressure environment P_(gap);loading the semiconductor assembly module into a compressive chamber;introducing a gas into the compressive chamber to create high pressureenvironment inside the compressive chamber called P_(chamber); Ingeneral, the compressive chamber pressure P_(chamber) is higher thanP_(gap) creating a pressure gradient effect; utilizing the internalacting gas pressure P_(acting) to force the organic or inorganicflowable material into the semiconductor assembly module gap regions;venting the compressive chamber to atmosphere pressure environmentcreating voids or air-gaps 17 in the semiconductor assembly module gapregions; removing the semiconductor assembly module (10 a or 10 b) fromthe compressive chamber 400; crosslinking the organic or inorganicflowable material 16 to be the partially cured (semi-cured) organic orinorganic material 16 by applying heat or photon energy; removing thepartially cured organic or inorganic material 16 on the edge of thesubstrate 12 sidewall using mechanical or chemical means; performing afinal curing step by applying heat and time to the semiconductorassembly module (10 a or 10 b) to cure the partially cured organic orinorganic material 16 to be stable solid.

A gas could be filling into the chamber to create a high internal actinggas pressure P_(acting) condition inside the chamber. As shown in FIG.4, FIG. 4 shows a scheme diagram of the compressive chamber. Thecompressive chamber 400 comprising a chamber 401 with a heatingfunction, a gas-in port 402, a programmable controlling valve 403, astage 404 in the chamber 401. The internal acting gas pressureP_(acting) could be controlled by the programmable controlling valve403. The internal acting gas pressure P_(acting) could be increased byfilling a gas; The internal acting gas pressure P_(acting) could bereduced by venting the gas; FIG. 3A and FIG. 3B structure with dispensedorganic or inorganic material could be loaded on the stage 404. Byfilling the gas into the chamber 401, a compressive pressure could beformed inside the chamber 401. Since the compressive pressure couldprovide an internal high pressure gas as a force direct acting on theedge of the organic or inorganic flowable material 16. The organic orinorganic flowable material 16 on the edge of the substrate 12 could beforced into the gap regions inside the semiconductor assembly module tofill the gap regions by using the internal acting gas pressureP_(acting). Higher pressure of gas fill in to the compressive chamber400 could generate more internal acting gas pressure P_(acting) to forcethe organic or inorganic material to fill into deeper gap regions insidethe semiconductor assembly module (10 a or 10 b).

After introducing a gas into the compressive chamber to create highpressure environment inside the compressive chamber and using theinternal acting gas pressure P_(acting) to force the organic orinorganic flowable material into the semiconductor assembly module gapregions; Please refer to FIG. 1A and FIG. 5A, FIG. 5A is the crosssectional view of the organic or inorganic flowable material 16 filledinto all of the gap-A regions in the Type-A semiconductor assemblymodule. The organic or inorganic flowable material 16 is also covered toa portion of the substrate sidewall in the edge gap regions of thesemiconductor assembly module; Please refer to FIG. 1B and FIG. 5B, FIG.5B is the cross-sectional view of the organic or inorganic flowablematerial filled into all of the gap-B region in the Type-B semiconductorassembly module. The organic or inorganic flowable material 16 is alsocovered to a portion of the substrate sidewall in the edge gap regionsof the semiconductor assembly module.

Please refer to FIG. 5A and FIG. 5B, FIG. 6 is a top view of the organicor inorganic flowable material filling into all gap regions of thesemiconductor assembly module. Please note that the organic or inorganicflowable material 16 could be also formed surround on the backplane 14of the semiconductor assembly module and covered to a portion of thesubstrate sidewall of the semiconductor assembly module.

The organic or inorganic material 16 is a flowable material such as aliquid could be photosensitive or non-photosensitive properties. Theorganic or inorganic flowable material 16 could be dyeing by colorchemical solutions. The organic or inorganic flowable material 16 couldbe semi cured or cured to be solid by using a thermal curing process, aUV curing (photon energy curing) process, or a IR curing process. Theorganic or inorganic flowable material 16 could be selected to form ashard properties after curing, such as gels, glues, sol-gels, epoxy,silicone, phenyl-silicone; photo-sensitive resister, UV cure able gluesand thermal cure able glues. The organic or inorganic flowable material16 could be also selected to form as stretch properties after curing,such as gels, glues, epoxy, polyimide, silicone, methyl-silicone,cohesive gels, silicone gels, PMMA, photosensitive resister, UV orthermal cure able glues. The organic or inorganic flowable material 16could be mixed with micron or submicron insulators, such as TiO₂, Al₂O₃,SiO₂, sol-gel, or any suitable powder. The organic or inorganic liquidcould be mixed with Nano-metals, such as Ni, Cu, Ag, Al and Au.

Please also refer to FIG. 4, the compressive chamber 400 could provide ahigh internal acting gas pressure P_(acting) environment by filling agas into the compressive chamber to create high pressure environmentinside the compressive chamber; using the internal acting gas pressureP_(acting) to force the organic or inorganic flowable material from theedge of substrate 12 to the gap regions of the semiconductor assemblymodule. The chamber pressure could be released to relative lowerpressure or atmosphere environment by the chamber controlling valveventing; In some particular condition, the viscosity of the organic orinorganic flowable material 16 could be diluted to be a lower viscosityproperty to force the flowable material into a longer distance of thegap regions of the semiconductor assembly module. The filling of thechamber gas could be selected from air (atmosphere), Nitrogen, Oxygen,Argon, Ammonia, Carbon dioxide, Chlorine, or Forming gas (N₂+H₂). Insome particular condition, high thermal conductivity of the gas such asHelium and Hydrogen could be selected in the chamber 401 to quicklytransfer the heat to the semiconductor assembly module. The organic orinorganic flowable material inside the gap regions of the semiconductorassembly module could be partial cured (semi cured) by applying a heator a photon energy; Furthermore, the organic or inorganic flowablematerial inside the gap regions of the semiconductor assembly modulecould be completely cured to be stable solid by applying heat up to thecuring temperature and curing process time.

In one embodiment of curing the organic or inorganic flowable material16 to be stable solid, the chamber 401 with high chamber pressure couldbe kept by sealing the programmable controlling valve 403. For curingthe organic or inorganic flowable material 16 to be stable solid, thechamber 401 could be then heating up to the curing temperature of theorganic or inorganic flowable material 16. Based on ideal gas equationof state expressed by:

PV=NKT;

wherein P=P_(chamber) is the pressure of the chamber, the V is thevolume of the chamber 401, N is the numbers of gas, K is a constant andT is the temperature of the chamber 401.

Therefore, the chamber pressure P_(chamber) could be increased whenincreasing the chamber temperature (T). The P_(gap) is also lineardependent with the temperature (T). Therefore, the P_(acting) in thechamber 401 could be changed during heating up the chamber 401. Thehigher P_(acting) should be sufficient to keep the organic or inorganicflowable material staying inside the gap regions while curing. Forexample, the chamber pressure could be set to P_(chamber)=5 atm byfilling the gas at room temperature; the organic or inorganic flowablematerial 16 curing temperature is 200° C. The target temperature to curethe organic or inorganic flowable material 16 is to heat up the chamberto a temperature higher than that of 200° C. When the chamber 401heating up from room temperature to over 200° C., the chamber pressureP_(chamber) could be a linear increasing from 5 atm to be about 20 atmor more. To keep the curing temperature at 200° C. and maintain theinternal acting gas pressure P_(acting) inside the chamber 401 such thatthe organic or inorganic flowable material staying inside the gapregions while curing; after a certain curing time, the organic orinorganic flowable material 16 could be substantially cured to be stablesolid in all the gap regions of the semiconductor assembly module. Then,nature cooling or programmable controlling cooling could be followed tocool down the chamber 401 from a high temperature (e.q. of 200° C.).down to the room temperature. The chamber pressure P_(chamber) could becompletely released after curing at high temperature (e.q. of 200° C.),or the chamber pressure P_(chamber) could be completely released aftercooling down to the room temperature. Please note that, when curing theorganic or inorganic flowable material, an out-gassing effect of theorganic or inorganic flowable material 16 could be generated to createvoids or air-gaps in gap regions. However, the out-gassing of air-gapscould be trapped without expansion due to the high internal acting gaspressure P_(acting) condition in the chamber 401.

In another one embodiment of curing the organic or inorganic flowablematerial to be stable solid, the initial internal acting gas pressureP_(acting)=P1_(acting) inside the chamber 401 could be controlled by thechamber pressure (P_(chamber)=P1_(chamber)) to force the organic orinorganic flowable material into the gap regions of the semiconductorassembly module. The chamber pressure P_(chamber) could be then reducedto P2_(chamber) (P2_(chamber)<P1_(chamber)) by the chamber controllingvalve 403 for curing process. For example, the initial chamber pressureP_(chamber) could be 5 atm (e.q. P_(chamber)=P1_(chamber)=5 atm). Beforeheating up the chamber 401 to the curing temperature of the organic orinorganic flowable material, the chamber pressure P_(chamber) could bereduced to a certain pressure P_(chamber)=P2_(chamber) that under 5 atm(e.g. P_(chamber)=P2_(chamber)<P1_(chamber)) by venting gas from thechamber. Under a P2_(chamber) condition, the internal acting gaspressure P_(acting)=P2_(acting) could be performed to retain the organicor inorganic flowable material 16; Then heating up the chambertemperature to the target organic or inorganic flowable material 16curing temperature (e.q. 200° C.) to cure the organic or inorganicflowable material 16 to be stable solid. When curing the organic orinorganic flowable material 16, an out-gassing effect could be generateddue to P2_(acting)<P1_(acting) to create more voids or air-gaps in thegap regions of the semiconductor assembly module.

In another embodiment of curing organic or inorganic flowable materialto be solid, the initial internal acting gas pressure P_(acting) in thecompressive chamber 401 could be controlled to a pressureP_(acting)=P1_(acting) to force the organic or inorganic flowablematerial into the gap regions of the semiconductor assembly module. Theinternal acting gas pressure P_(acting) could be then reduced toP_(acting)=P2_(acting) (P2_(acting)<P1_(acting)) by the chambercontrolling valve 403 for curing process. In the relative lower internalacting gas pressure P2_(acting) environment, the organic or inorganicflowable material 16 inside gap regions of the assembly module formed bythe initial internal acting gas pressure P1_(acting) could be thenpartially flow out and diffuse outside to edges of the substrate;expansion of the voids or air-gaps in gap regions of the semiconductorassembly module could be created; The chamber temperature could be heatup to a certain temperature which is less than that of the curingtemperature of the organic or inorganic flowable material to form apartial cured (semi cured) organic or inorganic flowable material. Afterheating up for a certain time, the organic or inorganic flowablematerial could be semi cured to be solid and remained inside the gapregions of the semiconductor assembly modules; the semi cured organic orinorganic material is a layer covered on the exposed surface inside thegap regions of the semiconductor assembly module.

In another one embodiment of curing organic or inorganic flowablematerial to be stable solid, the compressive chamber 401 could becontrolled to P_(chamber)=P1_(chamber) (e.q. P1_(chamber)=5 atm) toprovide an internal acting gas pressure P1_(acting) to force the organicor inorganic flowable material into the gap regions of the semiconductorassembly module. The semiconductor assembly module could be then loadedout from the compressive chamber 401 to 1 atm atmosphere environment.The organic or inorganic flowable material 16 filled in semiconductorassembly module gap regions could be then partially flow out and diffuseoutside to edges of the substrate; more expansion of the voids orair-gaps in gap regions of the semiconductor assembly module could becreated; Applying a heat to heat up the semiconductor assembly module tothe curing temperature, the organic or inorganic flowable material couldbe cured to be a stable solid and remained inside the gap regions of thesemiconductor assembly modules under 1 atm atmosphere environment; thecured organic or inorganic material is a layer covered on the exposedsurface inside the gap regions of the semiconductor assembly module.

In general, the high internal acting gas pressure P_(acting) could forcethe organic or inorganic flowable material 16 from the edge of substrate12 into the gap regions of the semiconductor assembly module. In someparticular condition, the organic or inorganic flowable material 16could not be able to be forced by the internal acting gas pressureP_(acting) to a far distance inside the semiconductor assembly modulegap regions due to not providing enough internal acting gas pressureP_(acting) by the compressive chamber pressure P_(chamber). Therefore, amicroscope could be performed to view from the top of the substrate toinspect the fill-in behavior of the organic or inorganic flowablematerial. If the organic or inorganic flowable material 16 could not beforced to the far distance inside the semiconductor assembly module gapregions, the organic or inorganic flowable material 16 could be dispenseagain to the edge of the substrate 12 and repeat the internal acting gasforce-in process again by applying another much higher internal actinggas pressure P_(acting) condition by increasing the chamber pressureP_(chamber). In another aspect, the viscosity of the organic orinorganic flowable material 16 could be diluted to a relative lowerviscosity for easier force-in into a longer distance to cover the allgap regions of the semiconductor assembly module. The covering layer ofthe dilute organic or inorganic flowable material 16 inside thesemiconductor assembly module gap regions may not be enough due to therelative lower viscosity property. Thus, multiple times of internalacting gas pressure P_(acting) force in process steps could be appliedto achieve enough covering layer purpose to cover all semiconductorassembly module gap regions. In another aspect, for multiple internalacting gas pressure P_(acting) force-in process steps, the viscosity ofthe organic or inorganic flowable material 16 could be increasedgradually to form enough covering layer inside gap regions of thesemiconductor assembly module.

Please refer to FIG. 5A and FIG. 7A. FIG. 7A shows the organic orinorganic flowable material could be formed as a layer covered to all ofthe gap-A regions in the Type-A semiconductor assembly module. Pleasenote that, the organic or inorganic material 16 on the edge of thesubstrate 12 could be cover a portion of the edged substrate sidewall. Avoid or an air-gap 17 formed in the organic or inorganic flowablematerial 16 on the edge gap regions could be due to the out-gassingeffect of organic or inorganic martial 16. Please refer to FIG. 5B, andFIG. 7B. FIG. 7B shows the organic or inorganic flowable material 16could be formed as a layer covered to all of the gap-B regions in theType B semiconductor assembly module. Please note that the organic orinorganic flowable material 16 on the edge of the substrate could becover a portion of the edged substrate sidewall. A void or an air-gap 17formed in the organic or inorganic material 16 on the edge gap regionscould be due to the out-gassing effect of organic or inorganic material.FIG. 8 is a top view of the organic or inorganic flowable materialcovered to the semiconductor assembly module in all semiconductorassembly module gaps. In the gap (gap-A or gap-B) regions, a void or anair-gap 17 (could not be illustrated from the top view) could be formedinside an organic or inorganic flowable material in gap regions. Pleasenote that the organic or inorganic flowable material 16 on the edge ofthe substrate 12 could be covered on a portion of the edged substrate 12sidewall and on a portion of the backplane 14.

The organic or inorganic flowable material 16 on the edge of thesubstrate sidewall and a portion of the backplane could be substantiallyremoved by using a chemical solution or mechanical means. For example,the organic or inorganic flowable material 16 could be a photo resistmaterial such as AZ-series, or NR-series etcetera the commercial commonused photoresist, the photoresist could be cured at a certaintemperature, and could be then removed by acetone or by the removal ofphotoresist chemicals. Please note that, the chemical solution could notbe able to get into the gap regions due to no internal acting gaspressure P_(acting) applying. In one embodiment to remove the edgedphotoresist, a cotton with chemical solution could be slightly touch theedge of the substrate sidewall and the backplane multiple times toremove the photoresist. In some particular, the photoresist could beexposure by a UV light to create a crosslink effect before stable solidcuring to enhance the photoresist strength.

After filling and curing the organic or inorganic flowable material inthe gap regions and edge gap regions, regarding to the Type-Asemiconductor array module, please refer to FIG. 5A, FIG. 7A and FIG.9A, FIG. 9A shows a portion of the semi-cured or cured organic orinorganic material on the edge of the substrate sidewall in the edge gapregions could be removed by mechanical or chemical means. In the edgegap regions, a portion of the organic or inorganic material that isunderneath of the edge of the substrate is remained to provide aproperty to hold, grip and connect the semiconductor units on the edgeof the array module 15. Please note that, the organic or inorganicmaterial 16 covered on the sidewall of the substrate could besubstantially removed. In similar, regarding to the Type-B semiconductorarray module, please refer to FIG. 5B, FIG. 7B and FIG. 9B, FIG. 9Bshows a portion of the semi-cured or cured organic or inorganic materialon the edge of the substrate sidewall in the edge gap region could beremoved by mechanical or chemical means. In the edge gap region, aportion of the organic or inorganic material that is underneath of theedge of the substrate is remained to provide a property to hold, gripand connect the semiconductor array units on the edge of the arraymodule 15. Please note that, the organic or inorganic material 16covered on the sidewall of the substrate could be substantially removed.

FIG. 10 is a top view of the organic or inorganic material covered tothe semiconductor assembly module in gap regions and a portion of theedge gap regions. In the gap (gap-A or gap-B) regions, voids or air-gaps17 (could not be illustrated from the top view) could be formed insidethe organic or inorganic material 16 in all assembly gap regions. Pleasenote that, the organic or inorganic material 16 could only remainunderneath of the substrate edge and not cover to the sidewall of thesubstrate.

For the properties of the organic or inorganic flowable material 16, inparticular, the organic or inorganic flowable material 16 after UV lightexposure could be a difficult removal material called a “hard organic orinorganic material”. The “hard organic or inorganic material” could bephotosensitive based material such as photosensitive-epoxy orphotosensitive-silicone, or photosensitive-polyimide. The “hard organicor inorganic material” could be crosslink by UV light exposure to be arelative hard property. Now referring to the above methods of fillingthe organic or inorganic flowable material into the gap regions insidethe semiconductor assembly module 10, the curing steps for theparticular material of the “hard organic or inorganic material” could bemodified as follows. The “hard organic or inorganic material” isinitially a flowable material and could be dispensed on the edge of thesubstrate 12 of the semiconductor assembly module 10; load thesemiconductor assembly module into the compressive chamber 400. Thecompressive chamber 400 provides a high internal acting gas pressureP_(acting) to force the flowable “hard organic or inorganic material”into the semiconductor assembly module gap regions. After high internalacting gas pressure P_(acting) forced in process, the semiconductorassembly module could be loaded out to the air at 1 atm atmosphere.voids or an air-gaps 17 could be formed in the gap regions and the edgegap regions. The semiconductor assembly module could be exposure by a UVlight exposure to the assigned region. The assigned region for the UVlight exposure is the region underneath the substrate 12 including aportion the edge gap regions and the gap regions inside thesemiconductor assembly module. The region outside of the assigned regioncould be patterned by a mask to shield the UV light exposure. The UVlight could only illuminate to exposure the flowable “hard organic orinorganic material” in the assigned region through the substrate 12. Theflowable “hard organic or inorganic material” in this assigned regioncould be crosslink to be solid with a relative hard property anddifficult to be removed by chemical solutions. In the region that isoutside of the assigned region, the “hard organic or inorganic material”could be removed by a chemical solution due to non-UV light exposure toperform the crosslinking. The semiconductor assembly module could bethen cured by heat up to a certain temperature. The temperature could beselected to be over the curing temperature of the “hard organic orinorganic material” to create a hard cured property, or the temperaturecould be selected to be below the curing temperature of the “hardorganic or inorganic material” to generate semi-cured flexible, stretch,soft properties.

Please refer to FIG. 9A and FIG. 9B, the organic or inorganic materialin the semiconductor assembly module gap regions could provide aflexible, stretch, soft characteristics to hold, grip and connect thesemiconductor units 11 and the jointing layer 13 to form an “continuousarray layer 31” on the backplane. The semiconductor units 11 connectedby the organic or inorganic material could strengthen the semiconductorassembly module to avoid a further physical violent process such assubstrate 12 removal process. In another aspect, the organic orinorganic material in the semiconductor assembly module gap regionscould provide a hard property to hold, grip and connect thesemiconductor units 11 and the jointing layer 13 to form the “continuousarray layer 31” on the backplane. The semiconductor units 11 and thejointing layer 13 connected by the organic or inorganic material couldenhance the semiconductor assembly module structure for further processsuch as substrate 12 removal process.

Please refer to FIG. 9A and FIG. 9B, the substrate 12 of thesemiconductor assembly module (10 a, or 10 b) could be removed to form asemiconductor convert module. Moreover, FIG. 11A shows the Type-Asemiconductor convert module, and FIG. 11B shows the Type Bsemiconductor convert module.

The substrate could be removed through different technologies such aslaser irradiation lift-off technology, grinding substrate technology,chemical wet etching technology, planarization technology, andmechanical removal technology. Please note that, when substrate removalis performed through laser irradiation technology, the semiconductorunits and organic or inorganic material are laser irradiationdecomposable materials.

For the grinding, planarization, and mechanical removal technologies, aviolent physical force to remove the substrate is required. The“continuous array layer 31” on the backplane is a completely connectingcompact structure. The completely connecting compact structure couldprovide enough strength to keep the whole structure of the semiconductorassembly module more robust. The semiconductor units could haveminimized damage before and after the violent substrate removal processsuch as grinding, planarization and mechanical removal process.

For the chemical wet etching technology, the substrate will be removedor etched by a chemical solution. The “continuous array layer 31” is acompact continuous layer to minimize the chemical solution penetration.When utilizing the chemical solution to remove the substrate, thecontinuous compact “continuous array layer 31” could protect the entirestructures of the semiconductor assembly module to minimize the chemicaldamage.

For the laser irradiation lift off technology, the laser could irradiatethrough the substrate and interacting on the interface of the materialunderneath the substrate. The interfacial layer underneath of thesubstrate could be a decomposable material. In the semiconductorassembly module, the continuous compact “continuous array layer 31” is arobustness layer. In other words, the organic or inorganic material inthe semiconductor assembly module gap regions is to hold, grip, connectthe semiconductor units. When applying the laser irradiation lift-offprocess, the organic or inorganic material in the semiconductor assemblymodule gap regions including voids or air-gaps could provide a buffereffect as a damper to release the stress acting on the semiconductorunits. The substrate could be delaminated to remove by additionalphysical force after performing the laser irradiation lift-off process.The semiconductor units in the “continuous array layer 31” has minimizeor almost no damage before and after laser irradiation lift-off andphysical force delaminate process.

In one specific embodiment for laser irradiation lift off technology,the laser beam could be controlled to be a circle beam or a square beam.The laser beam could be overlapping scanning; the overlapping region ofthe laser beam could be controlled to be less than 90% beam size. Thesize of the laser beam could be controlled smaller than that of asemiconductor unit size. The laser beam could be scanned by a linedirection scanning. The laser beam could be scanned along the edge ofthe semiconductor assembly module to provide a linear alignmentdecomposition from one edge gap regions to the another edge gap regions.The purpose of the along alignment laser scanning is to provide a gentledecomposition of the interfacial layer and symmetry to the connectingstructure. The interfacial layer of the symmetry array module in thesemiconductor assembly module could be decomposed in sequence. Thus, theconnecting structure underneath of the substrate could be delaminatedlinearly from the substrate by the laser irradiation without creatingdamage. In another one embodiment, the size of the semiconductor unitcould be smaller than that of the laser beam size. In this case, thelaser beam size could be adjusted to a beam size which could be a sizejust cover multiple semiconductor units as a selection.

Please refer to FIG. 9A and FIG. 9B, for the laser irradiation lift-offsubstrate process, the laser beam could be transparent through thesubstrate to decompose the interfacial semiconductor layer underneath ofthe substrate. The laser irradiation beam could also decompose theinterfacial organic or inorganic material layer underneath of thesubstrate 12. Please note that, the laser irradiation beam to decomposethe interfacial layer could create a violent explosion in a localregion. For example, a nitride based semiconductor material, the nitridecompound semiconductor could be decomposed to generate the nitrogen gasexplosion and spray to a local micro region. A local violent vibrationcould be enabled by the nitrogen gas explosion to be a shock wave. Thevibration shock wave could damage the semiconductor unit to be crack ormicro crack. The voids or an air-gaps 17 in the semiconductor assemblymodule gap-A regions could provide a damper effect to absorb or bufferthe vibration shock wave. In another one particular advantage, theorganic or inorganic material 16 filled or covered the semiconductorassembly module gap regions could provide a laser beam STOP zone(region) to protect the potential laser beam ablation damage of thecircuitry on the backplane 14.

After the substrate removal, referring to FIG. 11A, the semiconductorunits 11 and the organic or inorganic material 16 could be at thesubstantially same height level plane. A continue layer could be formedin the gap-A regions. The substantially same height level plane could bevery useful for further process steps required especially for sameheight level required structures fabrication.

Please refer to FIG. 9B, for the laser irradiation substrate removaltechnology, the laser beam could transparent through the substrate todecompose the interfacial semiconductor layer underneath of thesubstrate 12. Please note that, FIG. 9B structure has a continuesemiconductor layer in the gap-B region. The laser irradiation beam todecompose the semiconductor interfacial layer of the semiconductor unitcould create a violent explosion in a local micro region. For example, anitride based semiconductor material, the nitride compound semiconductorcould be decomposed to generate the nitrogen gas explosion to spray to alocal micro region. A local micro violent vibration could be enabled bythe nitrogen gas explosion to be a shock wave. The vibration shock wavecould damage the remained semiconductor layer in the gap-B region andthe semiconductor units to be crack or micro crack. In particular, FIG.9B, the Type-B semiconductor assembly module, the uneven structurecombines the semiconductor units and the thinner semiconductor layerremained in the gap-B regions is a weak structure. The weak structuremight not sustain the violent vibration shack wave. The voids orair-gaps of the organic or inorganic material in the semiconductorassembly module gap-B regions could provide a damper effect (air gap asa buffer region) to absorb and buffer the vibration shock wave in thegap-B regions.

After the substrate removal, referring to FIG. 11B, the remainedsemiconductor layer is at the substantially same height level plane. Acontinue compact layer could be formed in the gap-B regions. The sameheight level plane could be very useful for further process requiredespecially for same height level required structures fabrication.

In the particular case of the laser irradiation lift-off substrate, themethod to fill the organic and inorganic material in semiconductorassembly module gap regions to form an enhanced semiconductor assemblymodule could be utilized to any suitable application semiconductordevices fields such as semiconductor light emitting array unit display(micro LED display), touch panel, light emitting diode application,backlight unit (BLU) of liquid crystal display (LCD), liquid crystal onsilicon (LCoS), solid state lighting, micro engineering mechanicalsystem, high power devices, optical interconnection used vertical cavitysurface emitting laser (VCSEL), solar cell, battery, bio array sensorand other suitable semiconductor devices application. In particular,several embodiments in flexible semiconductor devices such as flexiblesemiconductor light emitting array unit display, flexible solar cell,flexible battery (flexible battery), flexible light emitting diode,flexible paper lighting, flexible solid state lighting, flexiblesensors, flexible panels, flexible electronics, flexible opticalinterconnection, flexible high power devices, the forming of the organicor inorganic material in semiconductor assembly module gap regions andutilizing laser irradiation lift-off process to form a semiconductorconvert module with a flexible backplane could be very useful methods toprotect the semiconductor units completely and saving cost.

In one embodiment, referring to FIG. 11A and FIG. 11B, additionalchemical solution treatment or dry etching process is applied to the topsurface semiconductor units in the FIG. 11A, and FIG. 11B structure toremove partial of the semiconductor layer of the semiconductor units.Please note that, the top surface of the FIG. 11A structure is acontinuous plane which consists the semiconductor layer of thesemiconductor units and the organic or inorganic material in the gap-Aregions to form a continuous array layer 31; The continuous plane couldprovide a well protection structure in the gap-A regions to protect thesidewall of semiconductor units in the gap-A region and the backplaneunderneath of the gap-A regions not to be damaged when applying theadditional chemical wet etching or dry etching process.

FIG. 12 is a top view of the organic or inorganic material fill in theedge gap regions and gap regions of the semiconductor convert module. Inthe gap regions, voids or air-gaps (could not be illustrated from thetop view) could be formed between top organic or inorganic materiallayer and bottom organic or inorganic material layer. Please note that,the top surface of the semiconductor assembly module is at the sameheight level to perform a substantially same height level plane.

After removing the substrate, in one embodiment, FIG. 13 shows theorganic or inorganic material in the edge gap regions and gap-A regionscould be completely removed to form another type of the semiconductorconvert module. For example, the organic or inorganic material could beselected by a photo resist material such as AZ series, or NR seriesexcreta commercial common used photo resist, the commercial common photoresist could be filled and cured at a certain temperature. After curing,the commercial common photo resist could be then removed by acetone orremoval of photo-resist chemicals. After removing the substrate, theorganic or inorganic material in the gap-A regions could be removed bychemical solutions.

In addition, another connecting layer could be formed on the FIG. 13structure. FIG. 14 shows a connecting layer is formed on thesemiconductor unit 11 and the gap regions to form a semiconductordriving module. The connecting layer 18 could be multiple layerscontaining an isolation layer 19 and a conductive layer 20 covered to aportion of the semiconductor unit and the gap regions. The isolationlayer 19 could be deposited on a portion of the top surface of thesemiconductor units 11, the sidewall of the semiconductor units 11 andthe gap-A regions; The isolation layer 19 is a dielectric material suchas SiO_(x), Si_(x)N_(y), Al₂O₃, TiO₂ using plasma enhance chemical vapordeposition, chemical vapor deposition, physical vapor deposition, atomiclayer deposition. The isolation layer 19 could be multiple dielectricmaterials having high/low refractive index such as distributed Braggreflector (DBR) structure to provide a dielectric reflection layer onthe sidewall of the semiconductor units 11. The isolation layer 19 couldbe optional selected from an organic or inorganic material such aspolyimide, silicone, parylene and epoxy. The isolation layer 19 could bealso option combined by multiple layers such as dielectric material andorganic or inorganic material. The isolation layer 19 could be multiplelayers containing a dielectric layer and an organic or inorganicmaterial layer. The conductive layer 20 deposit on the isolation layer19 and on a portion of the semiconductor layer of the semiconductor toform a semiconductor driving module; The conductive layer 20 could be ametal layer and provide a circuitry to contact the semiconductor unit 11and electrical connection to an electrode to form a common cathode or acommon anode circuitry. The conductive layer 20 could be a metal layerhaving a reflective characteristic to reflect a light, or reflect anelectrical magnetic wave inside a region of each one singlesemiconductor unit 11. The electrical magnetic wave could be confined ina single semiconductor unit 11 region to minimize the electricalmagnetic wave cross talk to the adjoin/adjacent semiconductor unit 11.The conductive layer 20 is one or multiple metal layers and could beselected direct from Ti, W, Ta, Cr, Al, Pt, Ag, Ni, Cu, Au or selectfrom the mixed of these metals to make an alloy layer or multiplecombination metal layers. The multiple combination metal layers could besuch as Ti/Al/Ni/Au, Ti/Al/Ni/Cu, Ti/Ag/Ni/Au, Ti/Ag/Ni/Cu, Cr/Al/Ni/Au.Cr/Ag/Ni/Au. In another one embodiment, the conductive layer 20 could bea transparent conductive layer (TCL). The TCL could be selected fromindium tin oxide (ITO), Gallium-doped ZnO (GZO), Indium-Gallium dopedZnO (IGZO), Al-doped zinc oxide (AZO). The thickness of the TCL could beselected from the optical length match one fourth wavelength to outputthe optimized optical power. In one embodiment of utilizing TCL, theconductive layer 20 could be covered to the semiconductor convert module(not shown in FIG. 16A) to form the semiconductor driving module. Theconductive layer 20 could be multiple layers comprising: a TCL layer andone or multiple metal layers. In some particular, the connecting layercould be only formed by a specific conductive layer 20; the specificconductive layer 20 deposit on a portion of the semiconductor unit 11and on the gap regions. The specific conductive layer 20 could be themetal layer formed on a portion of the semiconductor unit 11 and the TCLlayer formed on a portion of the semiconductor unit and the metal layer.

Now also referring from FIG. 1A to FIG. 13 and FIG. 15, FIG. 15illustrates a process scheme diagram of one embodiment to fabricate thesemiconductor driving module. 1) Forming a semiconductor assemblymodule; 2) Dispense an organic or inorganic flowable material on theedge of the substrate. 3) Loading the semiconductor assembly module intoa compressive pressure chamber. 4) Input a gas to fill into thecompressive chamber to generate a high pressure P1_(chamber) in thechamber. The P1_(chamber) is greater than that of 1 atm (for example of5 atm). 5) The organic or inorganic flowable material could be forced bythe internal acting gas pressure P1_(acting) into the semiconductorassembly module gap regions. The gap regions between the adjoin/adjacentsemiconductor units including the edge of the jointing layer could befilled by the organic or inorganic flowable material. 6) Release thehigh pressure P1_(chamber) to a relative lower pressure P2_(chamber).The pressure P2_(chamber) could be equal to 1 atm or optional to be lessthan 1 atm. 7) Heat up the chamber to cure the organic or inorganicflowable material to be solid. In option, the heat up temperature couldbe lower than that of the curing temperature of the organic or inorganicflowable material to create a semi-cured flexible property. In someparticular, process steps in step 6 and step 7, the semiconductorassembly module could be optional to be loaded out from the chamber torelease the pressure, and curing the organic or inorganic flowablematerial outside the chamber. 8) Load out the sample and inspect theorganic or inorganic material could be cover gap regions of thesemiconductor assembly module. If the covering of organic or inorganicflowable material has good coverage layer in the gap regions of thesemiconductor assembly module, then go to the next step. If the coveringof the organic or inorganic flowable material has no good coverage layerin the gap regions of the semiconductor assembly module, go back to step5 to repeat the high internal acting gas pressure P1_(acting) force-inprocess again and then followed step 5 to step 8 step to repeat. 9) Inoption, UV light exposure on the Semiconductor Unit region and thesemiconductor assembly module gap regions (not exposure the edge ofsubstrate sidewall). 10) Remove the residues of organic or inorganicflowable material coated on the edge of the substrate sidewall. 11)Laser scanning to the exposed substrate and remove the substrate of thesemiconductor assembly module to form a semiconductor convert module.12) In option, the organic or inorganic material in the semiconductorassembly module gap regions could be removed by chemical solutions afterremoving the substrate. 13) Forming a connecting layer on thesemiconductor convert module to form a semiconductor driving module.

For the Type-A semiconductor assembly module, in one embodiment, thesemiconductor unit could be a light emitting diode (LED) unit. FIGS.16A-16E show the Type-A semiconductor unit (LED unit). The LED unitstructure consists of a n-type layer, an active layer, and a p-typelayer. A conductive layer is formed on a p-type layer and the conductivelayer is formed on a pad. A metal base layer could be selected to formon the pad to enhance the LED unit structure. The metal base layer couldbe deposited by one or multiple metal layers through E-beam deposition,plasma enhanced chemical vapor deposition, sputtering. The metal baselayer could be further formed one or multiple metal layers byelectroforming or electrical less forming. In one embodiment, the metalbase layer has a magnetic property selected from at least one of Fe, Niand Co. In one particular embodiment, the magnetic metal base layercould be formed by electroforming. In one embodiment of electroforming,the electroforming of the magnetic metal base layer could be selectedfrom a nickel-cobalt electroplating chemical solution. The weightpercentage of cobalt could be ranging from 10% to 90% to form anelectroforming nickel-cobalt metal layer. A thicker electroforming metalbase layer with a higher composition weight percentage of cobalt couldenhance the magnetic properties to be much stronger.

FIG. 16A is a flip-chip Type-A LED unit structure formed by using aflip-chip LED process technology. A separated n-pad and metal baselayers, p-pad and metal base layers could be formed on the bottom in theflip-chip LED unit structure. FIG. 16B is a vertical-chip Type-A1 LEDunit structure formed by a vertical LED process technology. FIG. 16C isa vertical-chip Type-A2 LED unit structure formed by a vertical LEDprocess technology. Please note that a portion of the n-type layer islarger than that of p-type layer. FIG. 16D is a vertical-chip Type-A3LED unit structure formed by a vertical LED process technology. Pleasenote that, a portion of the n-type layer is gradual larger than that ofp-type layer and forming a bevel edge. The bevel angle α could begreater than 10°. The bevel edge could be formed by a gradual shape hardmask and dry etching process. The purpose of the bevel edge is toprovide a bevel surface on edge to form a better conformal protectedisolation layer 19 to protect the exposed p-n junction; the isolationlayer 19 could be a dielectric reflection layer. The bevel surfacecoated with the dielectric reflection layers could help to obtain morelight output from a vertical LED structure. FIG. 16E is a verticalType-A4 LED unit structure formed by a patterning growth substrate orpatterning a pre-growth n-type bulk layer to provide a height structure.A continues n-type layer could be grown on the pattering pre-growthn-type bulk layer. A continues active layer, and a continues p-typelayer could continue growth across the height structure on thepre-growth n-type bulk layer and following a vertical LED processtechnology. The height structure could be a cubic structure, ahemisphere structure, a parabolic ball structure, hexagonal structure, acylinder structure, a pyramid structure, a pillar structure.

For Type-B semiconductor assembly module, in one embodiment, thesemiconductor unit could be light emitting diode (LED) unit. Inparticular, for a LED unit, a portion of the n-type layer on the edgesides could be remained and electrical continuous to theneighbor/adjacent LED unit. FIG. 16F is a flip-chip Type-B LED unitstructure could be formed by using a flip-chip LED process. A separatedn-pad and metal base layers, p-pad and metal base layers could be formedon the bottom of the flip-chip Type-B LED unit structure. FIG. 16G is avertical Type-B1 LED unit structure formed by a vertical LED processtechnology. A portion of the n-type layer on the edge sides could beremained to be electrical continues layer to the neighbor/adjacentvertical LED unit. An isolation layer 19 could be formed on the exposedp-n junction to prevent a short current effect. FIG. 16H is a verticalType-B2 LED unit structure formed by a vertical LED process technology.Please note that a portion of the n-type layer is gradual larger thanthat of p-type layer and forming a bevel edge. The bevel angle α couldbe greater than 10°. The bevel edge could be formed by a gradual shapehard mask and dry etching process. The purpose of the bevel edge is toprovide a bevel surface on edge to form a protected isolation layer 19on the exposed p-n junction; the isolation layer 19 could be adielectric reflection layer. The bevel surface coated with thedielectric reflection layer could help to obtain more light output froma vertical LED structure. FIG. 16I is a vertical Type-A4 LED unitstructure formed by a patterning growth substrate or patterning apre-growth n-type bulk layer to provide a height structure. A continuesn-type layer could be grown on the pattering pre-growth n-type bulklayer. A continues active layer, and a continues p-type layer couldcontinue growth across the height structure on the n-type bulk layer andfollowing a vertical LED process technology. The height structure couldbe a cubic structure, a hemisphere structure, a parabolic ballstructure, hexagonal structure, a cylinder structure, a pyramidstructure, a pillar structure. Please note that, the continuesemiconductor layers are continuing to the neighbor vertical LED unit.

The isolation layer 19 in FIG. 16A, FIG. 16B, FIG. 16C, FIG. 16D, FIG.16E, FIG. 16F, FIG. 16G, FIG. 16H, and FIG. 16I could be a single layerselected from the dielectric material. The isolation layer 19 could be asingle layer such as an organic or inorganic material layer. The organicor inorganic material such as polyimide, silicone, parylene, and epoxycould be selected. The isolation layer 19 could be a multiple layercontaining a dielectric layer and an organic or inorganic layer. In someparticular, the organic or inorganic layer could be a non-completelycured (partial semi-cured) to provide a flexible, stretch, and softproperties. The conductive layer 20 could be a reflective metal layer toprovide a metal contact and reflector property. The conductive layer 20in FIG. 16A, FIG. 16B, FIG. 16C, FIG. 16D, FIG. 16E, FIG. 16F, FIG. 16G,FIG. 16H, and FIG. 16I could be a transparent conductive layer (TCL).The conductive layer 20 could combine a transparent conductive layer anda reflective metal layer.

The transparent conductive layer (TCL) could be selected from indium tinoxide (ITO), Gallium-doped ZnO (GZO), Indium-Gallium doped ZnO (IGZO),Al-doped zinc oxide (AZO). The thickness of the TCL could be selectedfrom the optical length match one fourth wavelength to output theoptimized optical power. The reflective metal layer could be selectedfrom Ti, W, Ta, Cr, Al, Ag, Pt, Ni, Cu, Au or mixed these metals to makean alloy layer or the multiple combination metal layers. The multiplecombination metal layers could be such as Ti/Al/Ni/Au, Ti/Al/Ni/Cu,Ti/Ag/Ni/Au, Ti/Ag/Ni/Cu, Cr/Al/Ni/Au. Cr/Ag/Ni/Au.

In one embodiment, a method to form a vertical light emitting diode(VLED) driving module comprising multiple VLED units formed on asubstrate to create a VLED array module; attaching the VLED array moduleto a backplane to form the VLED semiconductor assembly module in whichmultiple gap regions are formed inside the VLED semiconductor assemblymodule and edge gap regions are formed surround the edge of the VLEDsemiconductor assembly module; dispensing an organic or inorganicflowable material on an edge of the VLED semiconductor assembly module;loading the VLED semiconductor assembly module into a compressivechamber; introducing a gas into the compressive chamber to create highpressure environment inside the compressive chamber; using the highinternal acting gas pressure P_(acting) to force the organic orinorganic flowable material into the VLED semiconductor assembly modulegap regions; venting the compressive chamber to atmosphere pressureenvironment creating voids or air-gaps in the VLED semiconductorassembly module gap regions; removing the VLED semiconductor assemblymodule from the compressive chamber; crosslinking the organic orinorganic flowable material to be the partially cured (semi-cured)organic or inorganic material by applying heat or photon energy;removing the partially cured organic or inorganic material on the edgeof the substrate sidewall using mechanical or chemical means; performinga final curing step by applying heat and time to the VLED semiconductorassembly module to cure the partially cured organic or inorganicmaterial to be stable solid; forming a VLED semiconductor convert moduleby removing the substrate from the VLED semiconductor assembly moduleutilizing a substrate removal process such as laser irradiation lift-offprocess; forming N-contact metal layer on the VLED unit and an isolationlayer on the VLED semiconductor convert module; fabricating a commoncathode conductive layer on the cathode of the backplane and on theN-contact metal layer of the VLED semiconductor convert module toconnect to form a VLED semiconductor driving module.

FIG. 17 shows multiple VLED units together formed on a sapphiresubstrate create a VLED array module. The LED epitaxial layer consistsof a p-GaN, an active layer, and a n-GaN could be defined to formmultiple LED units on the sapphire substrate. A reflection layer couldbe formed on a portion of the top p-GaN surface. An isolation layer-1could be deposited and formed on the edge sidewall of the LED unit andon a portion of the top p-GaN. A p-metal layer could be then formed tocover the reflection layer and cover a portion of the top p-GaN surface.The p-metal could be also selected to cover a portion of the isolationlayer-1. The p-metal layer thickness could be greater than 20% ofepitaxial layer thickness. Another isolation layer-2 could be thenformed to cover the isolation layer-1 and a portion of the top p-GaNsurface, and a portion of the p-metal layer. A p-electrode layer couldbe then formed to cover a portion of the isolation layer-2 and the wholep-metal layer. A jointing layer could be then selected to from on thetop of the p-electrode layer. The reflection layer on p-GaN could be areflective metal layers such as, TCL, Pt, Ti, Cr, Ni, Ag, Al, Au, Cu, ortheir metal combination to a multiple metallization layers such asNi/Ag, Ni/Ag/Ni/Au, Ti/Ag/Ni/Au, Ti/Al/Ni/Au, Cr/Al/Ni/Au, or theiralloyed metal layers. The p-metal layer could be thicker than 20% of LEDepitaxial layer and selected from Pt, Ti, W, Ta, Cr, Ni, Ag, Al, Au, Cu,or their metal combination to a multiple metal layers such asTi/Ni/Cu/Ti, Ti/Ni/Au/Ti, Ti/Al/Ni/Au/Ti, Pt/Cu/Ti, Pt/Au/Ti. Thep-electrode layer could be selected from Pt, Ti, W, Ta, Cr, Ni, Ag, Al,Au, Cu, or their metal combination to a multiple metal layers such asCr/Ni/Au, Cr/Al/Ni/Au, Ti/Al/Ni/Au.

In another one embodiment, the reflection layer could be formed bymultiple dielectric layers. The dielectric layers having high/lowrefractive index such as distributed Bragg reflector (DBR) structure toprovide a dielectric reflection layer. For the reflection layer contactto the p-GaN, in particularly, to prevent a current leakage issuescaused from the crystal particles or defects, one particular embodimentcould be utilized to reduce probability of metal contact. The isolationlayer-1 could be selected to cover a major portion of the p-GaN region.The reflection layer could cover the major isolation layer-1 and coverto a portion of the top p-GaN surface as metal contact layer. Pleasenote that the current could be spread uniformly to the vertical LED fromthe metal contact layer. In general, the current in p-GaN could bespread well to a distance ranging from submicron meter to be about fewtens μm. However, the not enough metal contact area to the p-GaN couldresult in high operation voltage. Thus, the design area for theisolation layer-1 and the reflection layer formed on the p-GaN could beoptimized. Please note that the reflection layer covered the isolationlayer-1 could provide a light reflection effect. An optimized selectionof the isolation layer-1 thickness could provide a property having anomnidirectional reflection effect after a reflection layer deposition.

The jointing layer formed on the semiconductor units could be a metalbonding layer selected from a metal such as Cu, Au, Pb, Sn, In, Al, Ag,Bi, Ga, or their alloys such as AuSn, InAu, CuSn, CuAgSn, SnBi,etcetera; The jointing layer could be selected from the organic orinorganic liquid material mixed Nano-metals, such as Ni, Cu, Ag, Al, Au.The organic or inorganic liquid material mixed Nano-metals could beformed self-assembly to the metal base layers of LED units.

The VLED array module structure could be aligned and bonded to an anodelayer of a circuitry backplane to from a VLED semiconductor assemblymodule in which multiple gap regions (represented as street zones inFIG. 17) are formed inside the semiconductor assembly module and edgegap regions (represented as edge zones in FIG. 17) are formed surroundthe edge of the semiconductor assembly module (which is not shown here).Now referring to the steps of method of fill an organic and inorganicflowable material in semiconductor assembly module gap regions in FIG.15: dispensing an organic or inorganic flowable material on an edge ofthe VLED semiconductor assembly module; loading the VLED semiconductorassembly module into a compressive chamber; introducing a gas into thecompressive chamber to create high pressure environment inside thecompressive chamber; using the high internal acting gas pressureP_(acting) to force the organic or inorganic flowable material into theVLED semiconductor assembly module gap regions; venting the compressivechamber to atmosphere pressure environment and creating voids orair-gaps in the VLED semiconductor assembly module gap regions; removingthe VLED semiconductor assembly module from the compressive chamber;crosslinking the organic or inorganic flowable material to be thepartially cured (semi-cured) organic or inorganic material by applyingheat or photon energy; removing the partially cured organic or inorganicmaterial on the edge of the substrate sidewall using mechanical orchemical means; performing a final curing step by applying heat and timeto the VLED semiconductor assembly module to cure the partially curedorganic or inorganic material to be stable solid;

A laser beam irradiation could be utilized to scan from the top sapphiresubstrate and transparent through the sapphire and decompose theinterfacial layer underneath of the sapphire substrate. Thedecomposition of the GaN could be resulting as Ga residues and N₂ gas.The isolation layer-1 could not be able to decompose due to atransparent effect of a dielectric material at the laser irradiationwavelength. The isolation layer-2 could be decomposed to be a carbon.After laser beam irradiation, the Ga residues and the burned carbon maystill provide a stick force to connect the sapphire substrate. Anotheradditional physical force could be utilized to lifting off the sapphiresubstrate. Please note that, the isolation layer-1 could be stick wellon the sapphire substrate, however, the LED unit, and the isolationlayer-2 in the street could sandwich to the isolation layer-1. Whenutilizing additional physical force to the sapphire substrate or the LEDarray, the isolation layer-1 on sapphire could be clipped by LED unitand isolation layer-2, and then peeled from the sapphire substrate. Theisolation layer-1 could be well protected without cracking or damagingwhen utilizing the laser irradiation and the additional physical forceto peel it. The sapphire substrate could be removed to form a VLEDsemiconductor convert module.

In another aspect, a portion of the exposed n-GaN layer of the VLEDsemiconductor convert module could be removed by dry etching to reducethe light absorption effect. In option, the exposed n-GaN surface couldbe roughening selected by Alkaline chemical solutions or high densityplasma treatment. An isolation layer-3 (is not shown in here) could beformed on edge zones and street zones, and on a majority portion of theexposed n-GaN surface. An N-contact metal layer could be deposited onthe exposed n-GaN surface to form a contact. The N-contact metal layercould be selected from Ti, Cr, Al, Ag, Ni, Cu, Pt, Au or mixed thesemetals to make a metallization layer or an alloy layer. The combinationmetal layers could be such as Al/Pt/Au, Ti/Al/Ni/Au, Cr/Al/Ni/Au,Cr/Ag/Ni/Au. In some particular, the exposed n-GaN could be plasmatreatment or chemical treatment to create a roughen surface for morelight output and generate nitrogen vacancies on the exposed n-GaNsurface for better electrical contact (N-contact metal). For example, O2plasma could be formed to treat the exposed n-GaN surface, and thendeposit a Ti/Al, or TiAl/Ni/Au. The Ti on the plasma treated exposedn-GaN could form a Ti—N compound as a donor in the n-GaN surface to makegood metal-semiconductor contact.

The isolation layer-1, isolation layer-2 and isolation layer-3 could bedeposited by dielectric material such as SiO_(x), Si_(x)N_(y), Al₂O₃,TiO₂ using plasma enhance chemical vapor deposition, chemical vapordeposition, physical vapor deposition, atomic layer deposition. Pleasenote that the isolation layer could be multiple dielectric layers havinghigh/low refractive index such as distributed Bragg reflector (DBR)structure to provide a dielectric reflection layer on the sidewall ofthe micro light emitting device. The isolation layer-1, isolationlayer-2 and isolation layer-3 could be optional selected from organic orinorganic liquid such as polyimide, silicone, and epoxy. The isolationlayer-1, isolation layer-2 and isolation layer-3 could be optioncombined by multiple layers such as dielectric material and organic orinorganic material. The organic or inorganic material could be cured bythermal curing, UV curing, or IR curing after photolithographypatterning or filling. The organic or inorganic material could beselected from the hard materials, such as gels, glues, sol-gels, epoxy,silicone, polyimide, phenyl-silicone; photo-sensitive resister, UV cureable glues, and thermal cure able glues. The organic or inorganicmaterial could be also selected from the stretch materials, such asgels, glues, epoxy, polyimide, silicone, methyl-silicone, cohesive gels,silicone gels, PMMA, photosensitive photoresist, UV or thermal cure ableglues. In another aspect, the organic or inorganic material could bepurposed as black matrix array to absorb the light. The organic orinorganic material could be selected from dyeing hard materials, such asgels, glues, sol-gels, epoxy, silicone, polyimide, parylene,phenyl-silicone; photo-sensitive resister, UV cure able glues, andthermal cure able glues. The organic or inorganic material could be alsoselected from dyeing stretch materials, such as gels, glues, epoxy,polyimide, parylene, silicone, methyl-silicone, cohesive gels, siliconegels, PMMA, photosensitive photo resist, UV or thermal cure able glues.

A common cathode could be formed on top of the VLED semiconductorconvert module to form a VLED semiconductor driving module for the VLEDunits to light up. A common cathode layer could contact to a portioncathode layer of the backplane, contact to one edge zone of the VLEDsemiconductor convert module, contact to a major portion region on thestreet zones and connected a portion of the N-contact metal layer. Acommon cathode layer combined a common cathode layer array could be as adam array for further process application. In one embodiment, the VLEDsemiconductor driving module could be utilized to provide a direct panelbacklighting unit. An additional light diffusion layer and a colorconversion layer could be formed on the VLED semiconductor drivingmodule for uniform surface lighting. For a blue VLED, a color conversionlayer such as a phosphor sheet or a quantum dots (QDs) layer could beformed on the VLED semiconductor driving module to be a surface whitelight LED lighting. For some particular of surface white lighting, thebackplane could be a flexible substrate to form a soft, flexible whitelighting panel. In another one embodiment, an additional micro lensarray could be formed on top of a dam array to provide a projectedlighting from a surface. In another one embodiment, the VLEDsemiconductor driving module could be utilized to a micro LED display.An additional color conversion module could be aligned and formed on topof the dam array to convert the original VLED light wavelength spectrum(color) to another wavelength spectrum (color) to display color images.A color conversion layer could be formed in the dam of the dam array.The color conversion layer could be an organic or inorganic materialmixed with color converting particles such as phosphors or QDs. For ablue VLED semiconductor driving module, a green conversion layer couldbe formed in a dam array in one column, and a red conversion layer couldbe formed in another one dam array in one column to display a colorimage. For a UV light VLED semiconductor driving module, a blueconversion layer could be formed in a dam array in one column, a greenconversion layer could be formed in another one dam array in one column,and a red conversion layer could be formed in the other one dam array inone column to display color images.

In another one embodiment, a method to form a color emissive lightemitting diode driving module comprising: multiple first color LED unitsformed on a substrate to create a first color LED array module; multiplesecond color LED units together formed on a substrate to create a secondcolor LED array module; multiple third color LED units together formedon a substrate to create a third color LED array module; Attaching afirst color LED array module on a backplane having circuitry to form afirst color LED semiconductor assembly module in which multiple gapregions are formed inside the first color LED semiconductor assemblymodule; dispensing the organic or inorganic flowable material andintroducing an internal acting gas pressure P_(acting) to force theorganic or inorganic flowable material into the multiple gap regions;performing curing step by applying heat and time to cure the organic orinorganic material to be stable solid; utilizing a substrate removingprocess to remove the first color LED substrate; removing the organic orinorganic material to form a first color LED semiconductor convertmodule; Attaching a second color LED array module on the first color LEDsemiconductor convert module to form a second-first color LEDsemiconductor assembly module in which multiple gap regions are formedinside the second-first color LED semiconductor assembly module;dispensing the organic or inorganic flowable material and introducing aninternal acting gas pressure P_(acting) to force the organic orinorganic flowable material into the multiple gap regions; performingcuring step by applying heat and time to cure the organic or inorganicmaterial to be stable solid; utilizing a substrate removing process toremove the second color LED substrate; removing the organic or inorganicmaterial to form a second-first color LED semiconductor convert module;Attaching a third color LED array module on the second-first color LEDsemiconductor convert module to form a third-second-first color LEDsemiconductor assembly module in which multiple gap regions are formedinside the third-second-first color LED semiconductor assembly module;dispensing the organic or inorganic flowable material and introducing aninternal acting gas pressure P_(acting) to force the organic orinorganic flowable material into the multiple gap regions; performingcuring step by applying heat and time to cure the organic or inorganicmaterial to be stable solid; utilizing a substrate removing process toremove the third color LED substrate; removing the organic or inorganicmaterial to form a third-second-first color LED semiconductor convertmodule; utilizing an insulation layer to the gap regions; forming aN-contact metal layer and an isolation layer on the third-second-firstcolor LED convert module; fabricating a common cathode conductive layeron a cathode of the backplane, and connect to the N-contact metal layerof the third-second-first color LED semiconductor convert module to forma color emissive light emitting diode semiconductor driving module.

Please note that, the steps to form each color semiconductor assemblymodule could be repeat; For an example, in a particular option forobtaining an enough second color light output, the steps to form thesecond-first color LED semiconductor convert module could be repeat tothe following steps: another one second color LED array module (which iscalled second-2 color LED array module) could be attached to thesecond-first color LED convert module to form a second-2-second-firstcolor LED semiconductor assembly module in which multiple gap regionsare formed inside the second-second-first color LED semiconductorassembly module; dispensing the organic or inorganic flowable materialand introducing an internal acting gas pressure P_(acting) to force theorganic or inorganic flowable material into the multiple gap regions;performing curing step by applying heat and time to cure the organic orinorganic material to be stable solid; utilizing a substrate removingprocess to remove the second-2 color LED substrate; removing the organicor inorganic material to form a second-2-second-first color LEDsemiconductor convert module;

The color emissive LED semiconductor driving module could be applied todisplay color images, a color LED micro projector module to project acolor images to a screen for head up display such as HMD, VR, AR. Inanother one embodiment, the color LED driving module could be formed tobe a color LED direct type-backlight unit (BLU) module for LCD toperform a high lumen needed and high color saturation needed industrialmonitor display application. In another one embodiment, the color LEDsemiconductor driving module could be formed to be a high resolutionfull color LED display screen module in a mall for commercialadvertisement. In another one embodiment, the color emissive LEDsemiconductor driving module could be formed to be a colorful array LEDlight source assembled with jewelry, accessories, purses or any elementsto perform higher price-performance ratio.

More specifically to form a color emissive light emitting diodesemiconductor driving module; In one embodiment, FIGS. 18A-18G show aschematic diagram of side view and top view to fabricate the individualoriginal emissive color LED unit array module and the backplane. Theside view is the cross section scheme for each individual originalemissive color LED device unit on a substrate. The original emissivecolor LED unit structure could be a flip chip type LED unit, a verticalchip type LED unit, a series circuitry connection of multiple LED unitstogether formed an integrated LED unit.

FIG. 18A is a scheme diagram of N (row)×3 (column) blue (such as nitridecompound) LED units on a sapphire substrate to form a blue LED arraymodule. FIG. 18E is the top view of N (row)×3 (column) blue LED unitstogether formed on a sapphire substrate to form a blue LED array module.For the blue LED array module, number of N units of blue LED could beformed on the row, and three units of the blue LED could be formed onthe column. For the side view, three column blue LED units in the columnis represented underneath of the sapphire substrate. The die pitch ofthree column blue LED units is 3d. FIG. 18B is a scheme diagram of N(row)×3 (column) green (such as nitride compound) LED units on asapphire substrate to form a green LED array module. FIG. 18F is the topview of N (row)×3 (column) green LED units together formed on a sapphiresubstrate to form a green LED array module. In similar, for the greenLED array module, number of N units of green LED could be formed on therow, and three units of the green LED could be formed on the column. Forthe side view, three column green LED units in the column is representedunderneath of the sapphire substrate. The die pitch of three columngreen LED units is 3d; FIG. 18C is a scheme diagram of N (row)×3(column) red (such as quaternary (AlGaInP)) LED units on a GaAssubstrate to form a red LED array module. FIG. 18G is the top viewexample of N (row)×3 (column) red LED units on a GaAs substrate to forma red LED array module. In similar, array module, number of N units ofred LED could be formed on the row, and three units of the red LED couldbe formed on the column. For the side view, three column red LED unitsin the column is represented underneath of the GaAs substrate. The diepitch of three column red LED units is 3d. In some particular, the redLED unit could be a nitride compound red LED by increasing the Indiumcomposition of InGaN in active layer. FIG. 18D is multiple anode layerstogether formed on a backplane having circuitry to form an anode arraymodule. The die pitch of the anode layers of the backplane is d.

FIGS. 19A-19L show a process follow and steps to fabricate a full colorRGB LED semiconductor driving module. FIG. 19A shows a red LED arraymodule could be assembled on a red-used anode of the backplane to form ared LED semiconductor assembly module. An organic or inorganic flowablematerial could be filled into the red LED semiconductor assembly modulegap regions by using FIG. 15 steps of method. FIG. 19B is red LEDsemiconductor convert module showing the GaAs substrate of the red LEDsemiconductor assembly module could be then removed by a wet chemicaletching solution to form a red LED semiconductor convert module. Forexample, the removal of GaAs substrate could be NH₄OH and H₂O₂ blendedsolution. In the wet chemical etching, the gap regions of the backplanecircuits could be protected by the covering layer of the organic orinorganic material to prevent the wet chemical solution attacking. Afterremoving the GaAs substrate, the organic or inorganic material in gapregions could be removed by using another chemical solution such asacetone or suitable chemical solution. A red LED semiconductor convertmodule is formed and comprising multiple red LED units on red-usedanodes of the backplane. Next, FIG. 19C shows a green LED array modulecould be assembled on the green-used anode of the backplane to form agreen-red LED semiconductor assembly module. The green-used anodes isadjoin/neighboring to the red-used anodes and blue-used anodes. Pleasenote that, the thickness of the green LED unit could be higher than thatof the thickness of the red LED unit. FIG. 19D shows an organic orinorganic material could be filled into the green-red LED semiconductorassembly module gap regions. Please note that the thickness of the greenLED unit could be higher than that of the red LED unit. Multipleheight-gap regions are formed between the red LED unit and the sapphiresubstrate of the green LED after forming the green-red LED semiconductorassembly module. An organic or inorganic flowable material could befilled into the green-red LED semiconductor assembly module gap regionsand the height-gap regions by using FIG. 15 steps of method. Theheight-gap region filled with organic or inorganic liquid material couldabsorb the laser irradiation energy to protect the red LED units not tobe damaged during laser irradiation lift-off process. In option, FIG.19E shows the relative red LED unit region could be patterned with astop mask 21 on the top of the sapphire substrate to protect the red LEDunits not be damaged by a laser irradiation energy damage during thelaser irradiation lift-off process. FIG. 19F is a green-red LEDsemiconductor convert module showing the sapphire substrate of the greenLED array module could be then removed by a laser irradiation lift-offprocess. After removing the green LED sapphire substrate, FIG. 19G isthe green-red semiconductor convert module showing the organic orinorganic material in gap regions and the height gap regions could befurther removed by using a chemical solution such as acetone or suitablechemical solution. A green-red LED semiconductor convert module isformed and comprising: multiple red LED units on the red-used anodes ofthe backplane, and multiple green LED units on the green-used anodes ofthe backplane.

In option to obtain enough green LED light output power level, theprocess steps from FIG. 19C to FIG. 19G could be repeat to form anadditional one or more green LED units on the addition green-used anodesof the backplane.

Next, FIG. 19H shows a blue LED array module could be assembled on abackplane to form a blue-green-red LED semiconductor assembly module.The blue-used anodes are adjoin/neighboring to the green-used anodes andred-used anodes. Please note that, the thickness of the blue LED unitscould be higher than that of the thickness of the green LED units andthe thickness of the red LED units. After forming the blue-green-red LEDassembly, multiple height-gap regions are formed between the green LEDunit and the sapphire substrate of the blue LED, and another multipleheight-gap regions are formed between the red LED units and the sapphiresubstrate of the blue LED. FIG. 19I shows an organic or inorganicmaterial could be filled into the blue-green-red LED semiconductorassembly module gap regions and all height-gap regions. The gap regionsof the backplane and the height-gap regions could be filled with organicor inorganic material to absorb the laser irradiation energy; theheight-gap region filled with the organic or inorganic material couldprotect the red LED units and the green LED units not to be damagedduring the laser irradiation lift-off process. In option, FIG. 19J showsthe relative red LED units and green LED units region could be patternedwith a hard mask 21 on the top of the sapphire substrate of the blue LEDto prevent a laser irradiation damage.

The sapphire substrate of the blue LED could be then removed by a laserirradiation lift-off process and the organic or inorganic material ingaps could be removed to form a blue-green-red semiconductor convertmodule. The organic or inorganic material in gap regions and theheight-gap regions could be removed by using a chemical solution such asacetone or suitable chemical solution. FIG. 19K shows a blue-green-redLED semiconductor convert module is formed comprising: multiple red LEDunits on red-used anodes of the backplane, multiple green LED units onthe green-used anodes of the backplane, and multiple blue LED units onthe blue-used anodes of the backplane. FIG. 19L is the top view of theblue-green-red LED semiconductor convert module. The blue-green-red LEDsemiconductor convert module which consists of N×3 color LED units on abackplane. Please note that, a cathode layer could be designed on thebackplane (is not shown in here) for the blue-green-red LED convertmodule to further form a blue-green-red LED semiconductor driving modulefor color emissive light emitting diode.

In one specific embodiment, a full color display blue-green-red LEDsemiconductor driving module could be formed by using the blue-green-redLED semiconductor converted module. The gap regions between the LEDunits in the blue-green-red LED semiconductor converted module could beformed an insulation layer. An insulation layer as an isolation layercould also cover the edge of the sidewall of blue LED units, thesidewall of green LED units and the sidewall of red LED units. Theinsulation layer could be deposited by dielectric material such asSiO_(x), Si_(x)N_(y), Al₂O₃, TiO₂ using plasma enhance chemical vapordeposition, chemical vapor deposition, physical vapor deposition, atomiclayer deposition. Please note that, the isolation layer could bemultiple dielectrics having high/low refractive index such asdistributed Bragg reflector (DBR) structure to provide a dielectricreflection layer on the sidewall of the light emitting units. Theinsulation layer could be optional selected from organic or inorganicmaterial such as polyimide, silicone, and epoxy. The isolation layercould be option combined by multiple layers such as dielectric materialand organic or inorganic material. The organic or inorganic materialcould be cured by thermal curing, UV curing, or IR curing afterphotolithography patterning or filling. The organic or inorganicmaterial could be selected from the hard materials, such as gels, glues,sol-gels, epoxy, silicone, polyimide, phenyl-silicone; photo-sensitiveresister, UV cure able glues, and thermal cure able glues. The organicor inorganic material could be also selected from the stretch materials,such as gels, glues, epoxy, polyimide, parylene, silicone,methyl-silicone, cohesive gels, silicone gels, PMMA, photosensitivephotoresist, UV or thermal cure able glues. In some particular option,the organic or inorganic material could be dyeing to be a lightabsorption characteristic as a black matrix of display application.

FIG. 20 shows one embodiment layout for the full color displayblue-green-red LED semiconductor driving module. FIG. 20A is a top viewof the full color display blue-green-red LED semiconductor drivingmodule. FIG. 20B is a cross section view of the full color displayblue-green-red LED semiconductor driving module. A cathode layer couldbe pre-formed on top of the backplane. A N-contact metal could be formedon top of a portion of the top N-type layer of the multiple color (red,green, blue) LED units. Please note that the size of the N-contact metallayer should be optimized to be small enough to allow more light output.The N-contact metal layer for nitride compound green or blue LED couldbe selected from a group consisting at least one of Ti, Al, Ni, Au, Pt,Cr such as Ti/Al, Ti/Al/Ni/Au. The N-contact metal layer for the redquaternary (AlGaInP) LED could be selected from a group consisting atleast one of Ge, Au and Ni such as Ni/Ge/Au.

A transparent conductive layer (TCL) as a common cathode electricalconnecting layer could be formed on top of the entire blue-green-red LEDsemiconductor converted module and continuous to contact the cathodelayer of the backplane. The TCL could be selected from indium tin oxide(ITO), Gallium-doped ZnO (GZO), Indium-Gallium doped ZnO (IGZO),Al-doped zinc oxide (AZO). The thickness of the TCL could be selectedfrom the optical length match one fourth wavelength (in visiblewavelength range) to output the optimized optical light output power.

FIG. 21 shows another one embodiment layout for the full color displayblue-green-red LED semiconductor driving module. FIG. 21A is a top viewof the full color display blue-green-red LED semiconductor drivingmodule. FIG. 21B is a cross section view of the full color displayblue-green-red LED semiconductor driving module. In similar, refer toFIG. 20, a cathode layer could be pre-formed on top of the backplane. AN-contact metal could be formed on top of a portion of the top N-typelayer of the LED (red, green, blue) units. A continuous common cathodelayer from the cathode layer of the backplane could be formed on the rowline of gap region and connected to the N-contact metal layers.

In one specific embodiment of projection display, FIG. 22A shows anothermicro lens array could be formed on top of the FIG. 19K structure. Inaddition, FIG. 22B shows another one embodiment for the micro lensforming on top of the FIG. 19K structure. In another one embodiment, theprojector could be a display light engine to project the display imagesto a target screen. FIG. 22C shows a heat sink module could be formedunderneath of the backplane. A high current could be utilized into thedisplay engine to generate enough light output to obtain enoughprojected lumen on the target screen. The heat sink could be formed bypatterning and electroforming or any other suitable technologies.

The method of filling an organic or inorganic material in asemiconductor assembly module gap regions to form a substrate removalcould provide a robust semiconductor convert module structure forfurther violent physical process. Now, referring to FIG. 11A, thesemiconductor convert module could be selected to pick up a certainparts and transfer to any other target position. For the semiconductorunit, a magnetic property of metal base layers could be pre-formed tothe semiconductor unit. Referring to FIGS. 16A-16I, the metal baselayers such as one of Fe, Ni, Co, or their combination metal layerscould be formed in the semiconductor unit structure. In one particularembodiment, the magnetic metal base layers could be formed byelectroforming. In one particular embodiment, the electroformingmagnetic metal base layers could be selected from a nickel-cobaltelectroplating chemical solution. The weight percentage of cobalt couldbe ranging from 10% to 90% to form an electroforming nickel-cobalt metallayer. A thicker electroforming metal layers with a higher compositionweight percentage of cobalt could enhance the magnetic properties toprovide a stronger magnetic force characteristics. Any magnet orelectromagnet elements could be able selected to touch the semiconductorunit having magnetic property and pick the semiconductor units up by amagnetic force. FIG. 23 shows a top electromagnetic head could beposited to close to the top of FIG. 11A structure for an example (Pleasenote that the “backplane” in FIG. 11A structure is replaced to a“temporary substrate” in FIG. 23 structure). The electromagnetic headcould be charging a magnetic force by utilizing current. When theelectromagnetic head touch or slight touch the top surface of FIG. 13structure, the electromagnetic head could be charged by current togenerate the magnetic force to pick up a continuous array layer 31 fromthe temporary substrate; the continuous array layer 31 comprising themultiple semiconductor units, jointing layers and the organic orinorganic material in the gap region. FIG. 24 shows the electromagnetichead touch to the continuous array layer 31. In one embodiment, thejointing layer could be a not strong sticky adhesive organic orinorganic layer. The magnetic force of the electromagnetic head could belarge enough to pick up the continuous array layer 31 from the temporarysubstrate. In another one embodiment, the jointing layer could be athermal release able layer, or cooling release able layer. By eitherheating up the temporary substrate or cooling down the temporarysubstrate, the jointing layer could be easy to lose its stick effect. Inaddition, to heat up or cooling down the jointing layer could be alsoprovided by the electromagnetic head. In another embodiment, thejointing layer could be a low melting temperature metal layer, thetemporary substrate or magnetic head could be head up a temperature tomelt the low melting temperature metal layer of the jointing layer.

In another aspect, too high temperature may reduce the magneticproperties based on the metal curing point effect. The magnetic metalsused for electromagnetic head, and the magnetically metal base layersformed in the semiconductor unit, and the temperature property forreleasing the jointing layer adhesion could be optimized to perform abest picking up action. FIG. 25 shows the continuous array layer 31could be picked up from the temporary substrate by the electromagnetichead. The electromagnetic head could be easy to pick up the continuousarray layer 31 and then transfer to a backplane by placing on andpressing down. Please note that the continuous array layer 31 is arobust connecting layer structure for the electromagnetic head to pickup and place/press down process. The robust connecting layer structureof the continuous array layer 31 could be picked up together to minimizethe damage of the semiconductor units when applying any uneven magneticforce; When the electromagnetic head pressing the robust continuousarray layer 31 to the backplane, the pressing force acting on thecontinuous array layer 31 could perform and balance a uniformdistribution pressing force to the continuous array layer 31 and thebackplane; any uneven pressing force suddenly generation could bedistributed into the continuous array layer 31 to balance the unevenpressing force and minimize any potential damages. The suddenlygeneration force could be spreading to the whole continuous array layer31 to reduce a local suddenly force effect. FIG. 26 shows the continuousarray layer 31 could be aligned and placed/pressed to a backplane by theelectromagnetic head. The second jointing layer could be pre-formed onthe backplane. In one embodiment, the electromagnetic head could beheating up to a certain temperature to melt the jointing layer and thesecond jointing layer; then applying a pressing pressure to provide acertain pressure force to bond the continuous array layer 31 to thebackplane. In another one embodiment, the magnetic property of theelectromagnetic head could be reduced and degraded by heating up theelectromagnetic head. After aligning and placing the continuous arraylayer 31 to the backplane, the electromagnetic head could be removed andapply another heating head to provide a heat capacity to melt thejointing layer and the second jointing layer; then press the continuousarray layer 31 down and bonded to the backplane. The jointing layer andthe second jointing layer could be a bonding layer selected from one ormultiple metal layers such as Cu, Au, Pb, Sn, In, Al, Ag, Bi, Ga, ortheir alloys such as AuSn, InAu, CuSn, CuAgSn, SnBi, etcetera; Thejointing layer and the second jointing layer could be selected from theorganic or inorganic liquid mixed Nano-metals, such as Ni, Cu, Ag, Al,Au. The organic or inorganic liquid mixed Nano-metals could be formedself-assembly to the metal base layers of the semiconductor units afterapplying a curing temperature.

FIG. 27 shows another semiconductor convert module could be formed afterpressing the continuous array layer 31 and removing the electromagnetichead. The yield of the semiconductor transfer module after magnetic pickand press process could be higher due to the robust continuous arraylayer 31 structure. Please note that a substantially same high levelplane could be formed in the semiconductor convert module structure. Thesubstantially same high level plane as a uniform plane could be providedto simplify further required process steps such as patterning process.

FIG. 28 shows the organic or inorganic material layer in the edge gapregions and gap regions of the semiconductor convert module aftermagnetic pick and place/press process could be further removed by a wetchemical etching or a dry etching for any suitable applications. Thesemiconductor convert module could be utilized for any further requiredprocess steps such as forming a semiconductor driving array modules forany other applications.

Now, referring to FIG. 1A and FIG. 2, The array module could be variedto different combinations of semiconductor units to provide differentfunctions. In some particular embodiment, FIG. 29 is a cross sectionalview to show a multiple-patterns of semiconductor units having multiplefunctions semiconductor assembly module. Multiple patterns ofsemiconductor units having multiple functions together formed on asubstrate to form a multiple-patterns semiconductor array module. Thesemiconductor layers on a substrate could be patterned to multiplepatterns having multiple functions to form multiple-patternsemiconductor array module. The first semiconductor unit (I) having afirst function could be patterned to be the same size and shape comparedto FIG. 1A. The second semiconductor unit (II) having the secondfunction could be patterned to be different size and different shapecompared to the first semiconductor unit (I). A backplane is jointed tothe multiple-patterns array module by a jointing layer and formed ansemiconductor multiple-patterns assembly module. Gap regions includinggaps and gap channels could be formed in the multiple-patternssemiconductor assembly module. Please be noted that all the gaps of thegap regions forming inside the multiple-patterns semiconductor assemblymodule requires a gap channel; the gap channels is an exposed channelconnected to the edge of the substrate; an organic or inorganic materialcould be filled through the exposed gap channels into themultiple-patterns semiconductor assembly module gap regions.

The first semiconductor units (I) having a first pattern array and asecond semiconductor units (II) having a second pattern array could beformed on a substrate to form a multiple-patterns semiconductor arraymodule. Please note that multiple patterns of semiconductor units couldbe formed to a multiple-patterns semiconductor array module, but notlimited to one or two patterns. Two or more multiple-patternssemiconductor array module having multiple functions together assembledto a backplane having circuitry to form a multiple-patternssemiconductor assembly module to provide multiple array functions.

In one embodiment, FIG. 30 shows a top view of a multiple-patternssemiconductor assembly module. The first semiconductor unit (I) having afirst function could be a square pattern and the second semiconductorunit (II) having a second function could be a rectangular pattern. Thesecond semiconductor unit (II) could be formed between the semiconductorunits. Please be noted that, a gap regions including a gap channel couldbe formed inside the multiple-patterns semiconductor assembly module.The gap channel could expose and connect to the edge of the substrate.An organic or inorganic material could be filled into allmultiple-patterns semiconductor assembly module gap regions through thegap channel.

In another one embodiment, FIG. 31 shows a top view of another onemultiple-patterns semiconductor assembly module. The first semiconductorunit (I) having a first function could be a square pattern, and thesecond semiconductor unit (II) having a second function could be a longrectangular pattern as bar. The second semiconductor unit (II) as a barcould be formed in a row or column between the first semiconductor units(I). Please be noted that gap regions including gap channels and gapregions could be formed inside the multiple-patterns semiconductorassembly module. The gap channels could expose and connect to the edgeof the substrate. An organic or inorganic material could be filled intoall multiple-patterns semiconductor assembly module gap regions throughthe gap channel.

In another one embodiment, FIG. 32 shows a top view of another onemultiple-patterns semiconductor assembly module. The first semiconductorunit (I) having a first function could be a square pattern, and thesecond semiconductor unit (II) having a second function could benon-frame mesh pattern. The second semiconductor unit (II) as non-framemesh pattern could be formed to separate the first semiconductor units(I). Please be noted that gap regions including gaps and gap channelscould be formed inside the multiple-patterns semiconductor assemblymodule. The gap channels could expose and connect to the edge of thesubstrate. An organic or inorganic material could be filled into allmultiple-patterns semiconductor assembly module gap regions through thegap channel.

In another one embodiment, FIG. 33 shows a top view of another onemultiple-patterns semiconductor assembly module. The first semiconductorunit (I) having a first function could be a square pattern and thesecond semiconductor unit (II) having a second function could be arectangular pattern. The third semiconductor unit (III) having a thirdfunction could be a relative small square pattern compared to the firstsemiconductor unit (I). The second semiconductor unit (II) could beformed between the semiconductor unit (I). The third semiconductor unit(III) could be formed in the cross region of four second semiconductorunits (II). Please be noted that gap regions including gaps and gapchannels could be formed inside the multiple-patterns semiconductorassembly module. The gap channels could expose and connect to the edgeof the substrate. An organic or inorganic liquid could be filled intoall multiple-patterns semiconductor assembly module gap regions throughthe gap channel.

Now referring from FIG. 29 to FIG. 33, the multiple-patternssemiconductor assembly modules could be utilized to form differentrequired modules such as forming of a multiple-patterns semiconductorconvert module, forming of a multiple-patterns semiconductor drivingmodules for any other applications. In one embodiment, the firstsemiconductor unit (I) could be selected to form a first functionalsemiconductor driving module. The second semiconductor unit (II) couldbe selected to form second functional semiconductor driving module or adummy functional semiconductor driving module. The third semiconductorunit (III) could be selected to form a third functional semiconductordriving module. In one embodiment, the first semiconductor unit (I)could be a function of working LED semiconductor driving module, thesecond semiconductor unit (II) could be dummy LED semiconductor drivingmodule. The second dummy LED semiconductor driving module could bepurposed to provide as a same height unit inside the semiconductorassembly module for the LED circuitry connection could be formed at thesame height level plane after removal of the substrate. In another oneembodiment, the first semiconductor unit (I) could be as a function ofworking LED semiconductor driving module, the second semiconductor unit(II) and the third semiconductor unit (III) could be as a function of awall inside the semiconductor driving module to provide a property toprevent a light from the first LED unit emitting to theneighboring/adjacent first LED unit. In another aspect, the wall couldprovide a same height as the semiconductor unit (I) to form asubstantially same height level plane after removal of the substrate tosimplify a further photolithography patterning needed steps. In anotherone embodiment, the first semiconductor unit (I) could be formed as afunctional LED or diode unit. The second semiconductor unit (II) couldformed be as another reversed bias functional LED or diode unit such asa Zener diode. In another one particular embodiment, for a smart displayscreen application, the first semiconductor unit (I) could be formed asa functional self-emissive light pixel such as LED or OLED. The secondsemiconductor unit (II) could be a motion sensor to detect a hand orfinger moving motion. The third semiconductor unit (III) could be aninfrared self-emissive IR LED or VCSEL (vertical cavity surface emittinglaser) and emit an optical signal to an object such as a face or eyesfor patterning recognition. There are many functions of thesemiconductor units could be selected to form a multiple-patternssemiconductor assembly module for different applications, not limited tothe above description embodiment.

Thus the disclosure describes methods for filling in the organic andinorganic material into the semiconductor assembly modules, forming thesemiconductor convert modules, forming the semiconductor driving modulesand forming multiple patterns having multiple functions semiconductorassembly modules. While a number of exemplary aspects and embodimentshave been discussed above, those of skill in the art will recognizecertain modifications, permutations, additions and sub combinationsthereof. It is therefore intended that the following appended claims andclaims hereafter introduced are interpreted to include all suchmodifications, permutations, additions and sub-combinations as arewithin their true spirit and scope.

While the present invention has been described by way of examples and interms of preferred embodiments, it is to be understood that the presentinvention is not limited thereto. To the contrary, it is intended tocover various modifications. Therefore, the scope of the appended claimsshould be accorded the broadest interpretation so as to encompass allsuch modifications.

What is claimed is:
 1. A method to fill an flowable material into a gapregion in a semiconductor assembly module comprising: forming multiplesemiconductor units on the substrate to create an array module;attaching the array module to a backplane having circuitry to form thesemiconductor assembly module having multiple gap regions inside thesemiconductor assembly module and edge gap regions surround an edge ofthe semiconductor assembly module; dispensing a flowable material on anedge of the semiconductor assembly module; providing a high actingpressure environment to force the flowable material into thesemiconductor assembly module gap regions; creating voids in the gapregion of the semiconductor assembly module by reducing the high actingpressure and; applying heat or a photon energy to harden the flowablematerial to retain the harden flowable material and the voids in the gapregions.
 2. The method to fill the flowable material into the gap regionin the semiconductor assembly module according to claim 1 furthercomprising: removing the partially cured or semi-cured flowable materialon the edge of the substrate sidewall using mechanical or chemicalmeans.
 3. The method to fill the flowable material into the gap regionin the semiconductor assembly module according to claim 1 furthercomprising: applying the curing temperature and a certain time to thesemiconductor assembly module to cure the partially cured or semi-curedflowable material to be a stable solid.
 4. The method to fill theflowable material into the gap region in the semiconductor assemblymodule according to claim 3, wherein forming a semiconductor convertmodule by removing the substrate from the semiconductor assembly moduleutilizing a substrate removal process.
 5. The method to fill theflowable material into the gap region in the semiconductor assemblymodule according to claim 4, wherein fabricating a circuitry connectionon the semiconductor convert module to form a semiconductor drivingmodule.
 6. The method to fill the flowable material into the gap regionin the semiconductor assembly module according to claim 4, whereinmultiple metal base layers with a magnetic property formed in thesemiconductor units to handle or pick up a continuous array layer from atemporary substrate; handling the continuous array layer utilizing anelectromagnetic force.
 7. The method to fill the flowable material intothe gap region in the semiconductor assembly module according to claim 4further comprising: Utilizing an electromagnetic head to place thecontinuous array layer on the backplane; and applying a bonding processvia a temperature or the photon energy to connect a jointing layer ofthe continuous array layer to a second jointing layer of the backplaneto form the semiconductor convert module;
 8. The method to fill theflowable material into the gap region in the semiconductor assemblymodule according to claim 4 further comprising: forming a N-contactmetal layer on the semiconductor units; forming an isolation layer onthe semiconductor convert module; Connecting a common cathode conductivelayer on a cathode of the backplane and on the N-contact metal layer ofthe semiconductor convert module to form a semiconductor driving module.9. The method to fill the flowable material into the gap region in thesemiconductor assembly module according to claim 8, wherein thesemiconductor convert module is a vertical light emitting diode (VLED)semiconductor convert module; and the semiconductor driving module is aVLED driving module.
 10. The method to fill the flowable material intothe gap region in the array assembly module according to claim 9,wherein the semiconductor units has magnetic property of metal baselayers; and the metal base layers is formed by electroforming orelectrical less forming.
 11. A method to fill the flowable material intomultiple gap regions in one or more color LED semiconductor assemblymodules comprising: multiple first color LED units together formed on asubstrate to create a first color LED array module; multiple secondcolor LED units together formed on a substrate to create a second colorLED array module; multiple third color LED units together formed on asubstrate to create a third color LED array module; attaching a firstcolor LED array module on a backplane having circuitry to form a firstcolor LED semiconductor assembly module in which multiple gap regionsare formed inside the first color LED semiconductor assembly module;dispensing the flowable material and introducing an internal acting gaspressure to force the organic or inorganic flowable material into themultiple gap regions; performing curing step by applying heat and timeto cure the flowable material to be stable solid; utilizing a substrateremoving process to remove the first color LED substrate; removing thecured flowable material to form a first color LED semiconductor convertmodule; attaching a second color LED array module on the first color LEDsemiconductor convert module to form a second-first color LEDsemiconductor assembly module in which multiple gap regions are formedinside the second color-first color LED semiconductor assembly module;dispensing the flowable material and introducing an internal acting gaspressure to force the flowable material into the multiple gap regions;performing curing step by applying heat and time to cure the flowablematerial to be stable solid; utilizing a substrate removing process toremove the second color LED substrate; removing the cured flowablematerial to form a second-first color LED semiconductor convert module;attaching a third color LED array module on the second-first color LEDsemiconductor convert module to form a third-second-first color LEDsemiconductor assembly module in which multiple gap regions are formedinside the third-second color-first color LED semiconductor assemblymodule; dispensing the flowable material and introducing an internalacting gas pressure to force the flowable material into the multiple gapregions; and performing curing step by applying heat and time to curethe flowable material to be stable solid. utilizing a substrate removingprocess to remove the third color LED substrate; removing the organic orinorganic material to form a third-second-first color LED semiconductorconvert module; forming a N-contact metal layer on multiple color LEDunits of the third-second-first color LED semiconductor convert module;and utilizing an isolation layer in the gap regions and on a portion ofmultiple color LED units of the third-second-first color LEDsemiconductor convert module; fabricating a common cathode conductivelayer on a cathode of the backplane, and connect to the N-contact metallayer of the third-second-first color LED semiconductor convert moduleto form a color emissive light emitting diode semiconductor drivingmodule.
 12. The method to fill the flowable material into multiple gapregions in one or more color LED semiconductor assembly module accordingto claim 10, further comprising: Repeating steps of the forming of acolor LED semiconductor assembly module and a color LED semiconductorconvert module to obtain desired one or more color LED light output; 13.A semiconductor assembly module is comprising: multiple semiconductorunits are formed on the substrate to create an array module; the arraymodule is attached to a backplane having circuitry to form thesemiconductor assembly module in which multiple gap regions are formedinside the semiconductor assembly module and edge gap regions are formedsurround an edge of the assembly module; and the flowable material isflowed inside the gap region.
 14. The semiconductor assembly moduleaccording to claim 13, wherein a void or an air-gap is formed in the gapregions of the semiconductor assembly module.
 15. The semiconductorassembly module according to claim 14, wherein a semiconductor convertmodule is formed by removing the substrate from the semiconductorassembly module and utilizing a substrate removal process.
 16. Thesemiconductor assembly module according to claim 15, wherein anisolation layer is formed on the semiconductor convert module; and acircuitry connection is fabricated on the semiconductor convert moduleto form a semiconductor driving module.
 17. The semiconductor assemblymodule according to claim 16, wherein the semiconductor driving moduleis a color emissive light emitting diode semiconductor driving modulecomprising: a third-second-first color LED semiconductor convert modulewhich consists multiple first color LED units on first color used anodesof a backplane, multiple second color LED units on second color usedanodes of the backplane, multiple third color units on third color usedanodes of the backplane; and a N-contact metal layer is formed onmultiple color LED units of the third-second-first color LEDsemiconductor convert module; and an isolation layer is formed in thegap regions and on a portion of multiple color LED units of thethird-second-first color LED semiconductor convert module; and a commoncathode conductive layer is formed on a cathode of a backplane and theN-contact metal layer of the third-second-first color LED semiconductorconvert module to form the color emissive light emitting diodesemiconductor driving module.
 18. The semiconductor assembly module isaccording to claim 17, wherein a thickness of the first color LED unitin the color emissive light emitting diode semiconductor driving moduleis less than the thickness of the second color LED unit in the coloremissive light emitting diode semiconductor driving module and less thanthe thickness of the third color LED unit in the color emissive lightemitting diode semiconductor driving module.
 19. The semiconductorassembly module is according to claim 16, wherein the semiconductordriving module is: multiple-patterns of semiconductor units havingmultiple functions is assembled to a backplane having circuitry to forma multiple-patterns semiconductor driving module;
 20. The semiconductorassembly module according to claim 19, wherein the semiconductorassembly module is a multiple-patterns semiconductor driving modulecomprising: a first pattern semiconductor unit has a color self-emissivelight function; and a second pattern semiconductor unit has a sensorfunction; and a third patterns semiconductor unit has emissive anoptical signal function.